Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 332/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 200V DO-214AC |
7.758 |
|
- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 200V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 400V DO-214AC |
2.772 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 800V DO-214AC |
3.096 |
|
- | Standard | 800V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 800V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 1000V DO-214AC |
5.508 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 1000V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
3.762 |
|
Automotive, AEC-Q101 | Schottky | 60V | 30mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 200V | 1.6pF @ 1V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
7.092 |
|
Automotive, AEC-Q101 | Schottky | 60V | 30mA (DC) | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 60V | 1.6pF @ 1V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 MiniMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
3.402 |
|
Automotive, AEC-Q101 | Schottky | 50V | 30mA | 950mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 40V | 2.1pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 30MA SOD80 |
3.294 |
|
Automotive, AEC-Q101 | Schottky | 60V | 30mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 200V | 1.6pF @ 1V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 50V 30MA SOD80 |
8.028 |
|
Automotive, AEC-Q101 | Schottky | 50V | 30mA | 950mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 40V | 2.1pF @ 0V, 1MHz | Surface Mount | SOD-80 Variant | SOD-80 QuadroMELF | 125°C (Max) |
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Central Semiconductor Corp |
DIODE GEN PURP 1KV 1A DO41 |
6.606 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GPP 1A 1000V DO41 AXIAL |
8.460 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 800MA SUB SMA |
3.564 |
|
- | Standard | 50V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 800MA SUB SMA |
8.586 |
|
Automotive, AEC-Q101 | Standard | 50V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 800MA SUBSMA |
3.996 |
|
- | Standard | 100V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 800MA SUBSMA |
3.580 |
|
Automotive, AEC-Q101 | Standard | 100V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 800MA SUBSMA |
4.680 |
|
- | Standard | 200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 800MA SUBSMA |
7.704 |
|
Automotive, AEC-Q101 | Standard | 200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 800MA SUBSMA |
2.862 |
|
- | Standard | 400V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 800MA SUBSMA |
6.840 |
|
Automotive, AEC-Q101 | Standard | 400V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 800MA SUBSMA |
3.996 |
|
- | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 800MA SUBSMA |
6.228 |
|
Automotive, AEC-Q101 | Standard | 600V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 800MA SUBSMA |
3.222 |
|
- | Standard | 800V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 800MA SUBSMA |
4.500 |
|
Automotive, AEC-Q101 | Standard | 800V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 500MA SUB SMA |
7.416 |
|
- | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 500MA SUB SMA |
4.158 |
|
- | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
6.660 |
|
- | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
7.776 |
|
- | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
6.480 |
|
- | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
7.560 |
|
- | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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ON Semiconductor |
DIODE SCHOTTKY SMB |
5.076 |
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