Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 331/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 800MA SUBSMA |
5.850 |
|
- | Standard | 200V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 800MA SUBSMA |
5.130 |
|
- | Standard | 400V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 800MA SUBSMA |
8.820 |
|
- | Standard | 800V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
7.722 |
|
- | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A DO204AL |
6.084 |
|
- | Schottky | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO204AC |
2.412 |
|
- | Standard | - | 2A | 1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 1A TS-1 |
3.582 |
|
- | Standard | 800V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 100MA DO35 |
5.940 |
|
Automotive, AEC-Q101 | Schottky | 100V | 100mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 100V | 2pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
6.426 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 650mV @ 50mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
5.796 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 450mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 100MA DO35 |
8.964 |
|
Automotive, AEC-Q101 | Schottky | 100V | 100mA (DC) | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 100nA @ 100V | 2pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 200MA DO35 |
8.658 |
|
Automotive, AEC-Q101 | Schottky | 30V | 200mA (DC) | 450mV @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 500nA @ 25V | 7pF @ 1V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | 125°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 2A DO204AC |
6.480 |
|
Automotive, AEC-Q101 | Standard | 50V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 15pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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|
Nexperia |
DIODE SCHOTTKY 40V 200MA SOD323 |
2.484 |
|
- | Schottky | 40V | 200mA (DC) | 550mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 15µA @ 30V | 40pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | 125°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 500MA SUB SMA |
3.474 |
|
Automotive, AEC-Q101 | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 500MA SUB SMA |
6.444 |
|
Automotive, AEC-Q101 | Standard | 50V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 50V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
3.312 |
|
Automotive, AEC-Q101 | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 500MA SUBSMA |
5.940 |
|
Automotive, AEC-Q101 | Standard | 100V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
4.770 |
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Automotive, AEC-Q101 | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 500MA SUBSMA |
8.622 |
|
Automotive, AEC-Q101 | Standard | 200V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 200MA 1005 |
3.888 |
|
- | Schottky | 40V | 200mA | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 200nA @ 30V | 5pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200A 1005 |
2.124 |
|
- | Schottky | 30V | 200mA | 650mV @ 50mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200A 1005 |
3.508 |
|
- | Schottky | 30V | 200mA | 450mV @ 15mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 200MA 1005 |
5.562 |
|
- | Schottky | 30V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 2µA @ 25V | 10pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 70V 70MA 1005 |
4.932 |
|
- | Schottky | 70V | 70mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | 5ns | 100nA @ 50V | 2pF @ 0V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005 | -65°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A TS-1 |
3.366 |
|
- | Standard | 100V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A TS-1 |
3.472 |
|
- | Standard | 200V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 15pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO204AL |
5.130 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | 55pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 50V DO-214AC |
2.088 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 50V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GPP 1A 100V DO-214AC |
2.430 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 100V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |