Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 239/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 35V 8A POWERMITE3 |
4.482 |
|
- | Schottky | 35V | 8A | 510mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1.4mA @ 35V | - | Surface Mount | Powermite®3 | Powermite 3 | -55°C ~ 125°C |
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
15.732 |
|
- | Standard | 600V | 8A | 2.95V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
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STMicroelectronics |
AUTOMOTIVE 650 V POWER SCHOTTKY |
5.180 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A | - | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 480pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 12A TO220AC |
7.688 |
|
Automotive, AEC-Q101, ECOPACK®2 | Schottky | 650V | 12A | 1.75V @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 650V | 530pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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|
ON Semiconductor |
650V 10A SIC SBD GEN1.5 |
8.838 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 27A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 4A DO213AA |
32.244 |
|
Military, MIL-PRF-19500/144 | Standard | 50V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1KV 30A D2PAK |
4.968 |
|
Automotive, AEC-Q101 | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK | -40°C ~ 175°C |
|
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|
Microsemi |
DIODE SCHOTTKY 40V 8A POWERMITE |
7.524 |
|
- | Schottky | 40V | 8A | 450mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 40V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 125°C |
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ON Semiconductor |
DIODE GEN PURP 600V 50A TO247 |
10.104 |
|
Stealth™ | Standard | 600V | 50A | 1.54V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 124ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
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STMicroelectronics |
DIODES AND RECTIFIERS |
248 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 12A | 1.45V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
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STMicroelectronics |
AUTOMOTIVE-GRADE SILICON CARBIDE |
1.734 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 12A | 1.45V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 650V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
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|
Littelfuse |
DIODE GEN PURP 600V 60A TO247AC |
7.128 |
|
DUR | Standard | 600V | 60A | 2V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO263AB |
951 |
|
- | Silicon Carbide Schottky | 650V | 12A | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A D2PAK |
6.439 |
|
HEXFRED® | Standard | 1200V | 6A (DC) | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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|
Semtech |
DIODE GEN PURP 400V 1A AXIAL |
3.420 |
|
- | Avalanche | 400V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Semtech |
DIODE GEN PURP 1KV 1A AXIAL |
5.850 |
|
- | Avalanche | 1000V | 2A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 1000V | 23pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Semtech |
DIODE GEN PURP 400V 2A AXIAL |
8.496 |
|
- | Standard | 400V | 2A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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Semtech |
DIODE GEN PURP 400V 4.5A AXIAL |
3.366 |
|
- | Standard | 400V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | 165pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech |
DIODE GEN PURP 200V 1A AXIAL |
3.222 |
|
- | Standard | 200V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 200V | 27pF @ 5V, 1MHz | Through Hole | Axial | Axial | - |
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Semtech |
DIODE GEN PURP 200V 4.5A AXIAL |
4.752 |
|
- | Standard | 200V | 4.5A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 200V | 250pF @ 4V, 1MHz | Through Hole | Axial | Axial | - |
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ON Semiconductor |
650V 12A SIC SBD |
2.052 |
|
- | Silicon Carbide Schottky | 650V | 12.5A (DC) | 1.75V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 665pF @ 1V, 100kHz | Surface Mount | 4-PowerTSFN | 4-PQFN (8x8) | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A TO220AC |
475 |
|
- | Silicon Carbide Schottky | 650V | 10A | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 250µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A POWIRTAB |
301 |
|
FRED Pt® | Standard | 400V | 80A | 1.3V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 400V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | - |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO263AB |
4.716 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A D2PAK |
345 |
|
HEXFRED® | Standard | 600V | 25A (DC) | 1.7V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 20µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A TO220AC |
88 |
|
HEXFRED® | Standard | 1200V | 8A | 3.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 10µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Semtech |
DIODE GEN PURP 150V 2.5A AXIAL |
5.364 |
|
- | Standard | 150V | 2.5A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 5V, 1MHz | Through Hole | Axial | Axial | -65°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A DPAK |
8.100 |
|
ECOPACK® | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
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Littelfuse |
DIODE GEN PURP 1.2KV 60A TO247AC |
9.948 |
|
DUR | Standard | 1200V | 60A | 3.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 650µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC | -55°C ~ 150°C |
|
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ON Semiconductor |
1200V 8A SIC SBD |
7.488 |
|
- | Silicon Carbide Schottky | 1200V | 22.5A (DC) | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 538pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |