Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 238/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE SCHOTTKY 170V 30A POWRFLAT |
8.028 |
|
- | Schottky | 170V | 30A | 950mV @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | - | 15µA @ 170V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 150°C (Max) |
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ON Semiconductor |
650V 6A SIC SBD |
2.124 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.75V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 365pF @ 1V, 100kHz | Surface Mount | 4-PowerTSFN | 4-PQFN (8x8) | -55°C ~ 175°C |
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|
STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
16.332 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 3.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE SCHOTTKY 650V 8A DPAK |
2.736 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.75V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 15A D2PAK |
12.924 |
|
- | Standard | 1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GP 200V 30A POWERFLAT |
6.300 |
|
- | Standard | 200V | 30A | 1.15V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | - | Surface Mount | 8-PowerVDFN | PowerFlat™ (5x6) | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - D2PAK-E3 |
4.032 |
|
Automotive, AEC-Q101 | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - D2PAK-E3 |
7.074 |
|
Automotive, AEC-Q101 | Standard | 600V | 20A | 1.67V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 5A DPAK |
3.472 |
|
ECOPACK® | Silicon Carbide Schottky | 1200V | 5A | 1.5V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 1200V | 450pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 8A D-PAK |
6.516 |
|
- | Standard | 1200V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
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|
WeEn Semiconductors |
DIODE SCHOTTKY 650V 6A TO220AC |
41.106 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.7V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 190pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220AC |
40 |
|
HEXFRED® | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Microsemi |
DIODE GEN PURP 600V 2A POWERMITE |
20.861 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 600V | - | Surface Mount | DO-216AA | Powermite | -55°C ~ 150°C |
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|
Littelfuse |
DIODE SCHOTTKY 1.2KV 18.1A TO252 |
7.506 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 18.1A (DC) | 1.8V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 310pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | -55°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 6A DPAK |
8.298 |
|
- | Silicon Carbide Schottky | 1200V | 6A | 1.9V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 330pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 400V 30A DO247 |
7.116 |
|
Automotive, AEC-Q101 | Standard | 400V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 1.2KV 1A TO220AC |
14.694 |
|
- | Silicon Carbide Schottky | 1200V | 1A | 1.8V @ 1A | No Recovery Time > 500mA (Io) | 0ns | 2µA @ 1200V | 69pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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WeEn Semiconductors |
DIODE SCHOTTKY 650V 10A TO220AC |
38.298 |
|
- | Silicon Carbide Schottky | 650V | 10A | 1.85V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 230µA @ 650V | 250pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
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STMicroelectronics |
AUTOMOTIVE-GRADE SILICON CARBIDE |
8.622 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 8A | 1.65V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 650V | 414pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK HV | -40°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
5.220 |
|
- | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
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|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
7.326 |
|
- | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -55°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO263AB |
7.056 |
|
- | Silicon Carbide Schottky | 650V | 8A (DC) | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
10.812 |
|
Automotive, AEC-Q101 | Standard | 1600V | 45A | 1.16V @ 45A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 50V 200MA DO213AA |
6.204 |
|
- | Standard | 50V | 200mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Surface Mount | DO-213AA | DO-213AA | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247-2 |
18.696 |
|
- | Standard | 600V | 30A | 3.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | - | -40°C ~ 175°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 15V 65A TO247AC |
12.948 |
|
- | Schottky | 15V | 65A | 500mV @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | - | 18mA @ 15V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 125°C |
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|
STMicroelectronics |
DIODES AND RECTIFIERS |
5.419 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 10A | 1.45V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 130µA @ 650V | 670pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
SILICON CARBIDE DIODES |
836 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 12A | 1.45V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 150µA @ 650V | 750pF @ 0V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 30A TO220AC |
26.718 |
|
- | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
ON Semiconductor |
650V 10A SIC SBD |
8.442 |
|
- | Silicon Carbide Schottky | 650V | 18A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 575pF @ 1V, 100kHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |