Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 117/1165
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE GEN PURP 400V 30A TO220AC |
16.776 |
|
- | Standard | 400V | 30A | 1.45V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 15A TO263AB |
35.730 |
|
- | Silicon Carbide Schottky | 650V | 15A | 1.55V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 600V | 550pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 175°C (Max) |
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Microsemi |
DIODE GEN PURP 1.2KV 30A TO247 |
7.260 |
|
- | Standard | 1200V | 30A | 3.3V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 320ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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|
IXYS |
DIODE GEN PURP 1.2KV 26A TO247AD |
22.872 |
|
- | Standard | 1200V | 26A | 2.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 750µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SC SCHKY 650V 6A TO220ACP |
19.320 |
|
- | Silicon Carbide Schottky | 650V | 6A | 1.5V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 30µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
|
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
13.392 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
18.252 |
|
- | Standard | 600V | 30A | 1.85V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO252AA |
33.258 |
|
- | Standard | 600V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 600V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 8A TO252AA |
14.748 |
|
- | Standard | 1000V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 270ns | 100µA @ 1000V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 8A TO252AA |
7.140 |
|
- | Standard | 400V | 8A | 1.2V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 100µA @ 400V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
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|
Microsemi |
DIODE GEN PURP 1KV 40A TO247 |
88.380 |
|
- | Standard | 1000V | 40A | 3V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
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STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
26.538 |
|
- | Standard | 600V | 8A | 3.6V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | 175°C (Max) |
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ON Semiconductor |
DIODE GEN PURP 1.2KV 18A TO247 |
10.608 |
|
Stealth™ | Standard | 1200V | 18A | 3.3V @ 18A | Fast Recovery =< 500ns, > 200mA (Io) | 70ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 150°C |
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IXYS |
DIODE GEN PURP 600V 30A TO247AD |
6.420 |
|
HiPerFRED™ | Standard | 600V | 30A | 1.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 600V 60A TO247 |
6.912 |
|
- | Standard | 600V | 60A | 2.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO220FP |
16.884 |
|
FRED Pt® | Standard | 600V | 15A | 2.2V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 29ns | 40µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
9.096 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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ON Semiconductor |
DIODE GEN PURP 600V 80A TO247 |
22.884 |
|
- | Standard | 600V | 80A | 1.6V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 250µA @ 600V | - | Through Hole | TO-247-2 | TO-247-2 | -65°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247 |
204 |
|
- | Standard | 1200V | 60A | 1.3V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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STMicroelectronics |
DIODE GEN PURP 600V 30A DO247 |
7.578 |
|
- | Standard | 600V | 30A | 1.55V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
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IXYS |
DIODE AVALANCHE 1.8KV 2.3A |
2.958 |
|
- | Avalanche | 1800V | 2.3A | 1.34V @ 7A | Standard Recovery >500ns, > 200mA (Io) | - | 700µA @ 1800V | - | Through Hole | Radial | - | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A TO247AC |
274 |
|
- | Standard | 1600V | 40A | 1.14V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
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Rohm Semiconductor |
DIODE SCHOTTKY 650V 8A TO220FM |
26.292 |
|
- | Silicon Carbide Schottky | 650V | 8A | 1.55V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 160µA @ 600V | 291pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
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Infineon Technologies |
DIODE GEN PURP 600V 120A TO247-3 |
7.524 |
|
- | Standard | 600V | 120A (DC) | 2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 121ns | 40µA @ 600V | - | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 60A DO247 |
9.888 |
|
Automotive, AEC-Q101, ECOPACK®2 | Standard | 1200V | 60A | 1.3V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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STMicroelectronics |
DIODE GEN PURP 1.2KV 75A DO247 |
7.301 |
|
- | Standard | 1200V | 75A | 3.2V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 50µA @ 1200V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
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IXYS |
DIODE GEN PURP 200V 69A TO247AD |
16.296 |
|
- | Standard | 200V | 69A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 50µA @ 200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
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Cree/Wolfspeed |
DIODE SCHOTTKY 650V 8A TO220-2 |
14.844 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 24A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 441pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
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IXYS |
DIODE GP 600V 30A ISOPLUS247 |
7.404 |
|
HiPerFRED™ | Standard | 600V | 30A | 2.51V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 250µA @ 600V | - | Through Hole | ISOPLUS247™ | ISOPLUS247™ | -55°C ~ 175°C |
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Microsemi |
DIODE GEN PURP 400V 60A TO247 |
6.318 |
|
- | Standard | 400V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 37ns | 250µA @ 400V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |