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Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
Datensätze 34.936
Seite 116/1165
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
STTH8R04D
STMicroelectronics
DIODE GEN PURP 400V 8A TO220AC
15.492
-
Standard
400V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STTH8R06DIRG
STMicroelectronics
DIODE GEN PURP 600V 8A TO220AC
12.774
-
Standard
600V
8A
2.9V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
30µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
VS-ETH3006-M3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO220-2
52.692
FRED Pt®
Standard
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220-2
-65°C ~ 175°C
STTH8R04DI
STMicroelectronics
DIODE GEN PURP 400V 8A TO220AC
25.980
-
Standard
400V
8A
1.5V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
-40°C ~ 175°C
STPS5H100B
STMicroelectronics
DIODE SCHOTTKY 100V 5A DPAK
383.712
-
Schottky
100V
5A
730mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
3.5µA @ 100V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
175°C (Max)
VT4045BP-M3/4W
Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 45V 40A TO220AC
15.156
TMBS®
Schottky
45V
40A (DC)
670mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
3mA @ 45V
-
Through Hole
TO-220-2
TO-220AC
200°C (Max)
STTH812FP
STMicroelectronics
DIODE GEN PURP 1.2KV 8A TO220FP
31.956
-
Standard
1200V
8A
2.2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
8µA @ 1200V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
TO-220FPAC
175°C (Max)
STTH810D
STMicroelectronics
DIODE GEN PURP 1KV 8A TO220AC
20.394
-
Standard
1000V
8A
2V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
85ns
5µA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
FFPF20UP40S
ON Semiconductor
DIODE GEN PURP 400V 20A TO220F
28.014
-
Standard
400V
20A
1.4V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 400V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-55°C ~ 150°C
STTH1202D
STMicroelectronics
DIODE GEN PURP 200V 12A TO220AC
19.392
-
Standard
200V
12A
1.1V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
-
Through Hole
TO-220-2
TO-220AC
175°C (Max)
FESF16JT-E3/45
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 16A ITO220AC
21.660
-
Standard
600V
16A
1.5V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
C3D04065A
Cree/Wolfspeed
DIODE SCHOTTKY 650V 4A TO220-2
7.956
Z-Rec®
Silicon Carbide Schottky
650V
13.5A (DC)
1.8V @ 4A
No Recovery Time > 500mA (Io)
0ns
60µA @ 650V
251pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220-2
-55°C ~ 175°C
LXA20T600
Power Integrations
DIODE GEN PURP 600V 20A TO220AC
33.858
Qspeed™
Standard
600V
20A
3.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
26.5ns
250µA @ 600V
92pF @ 10V, 1MHz
Through Hole
TO-220-2
TO-220AC
150°C (Max)
SCS304APC9
Rohm Semiconductor
DIODE SCHOTTKY 650V 4A TO220-2
13.194
-
Silicon Carbide Schottky
650V
4A (DC)
1.5V @ 4A
No Recovery Time > 500mA (Io)
0ns
20µA @ 650V
200pF @ 1V, 1MHz
Through Hole
TO-220-2
-
175°C (Max)
STTH20R04FP
STMicroelectronics
DIODE GEN PURP 400V 20A TO220FP
24.438
-
Standard
400V
20A
1.7V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
20µA @ 400V
-
Through Hole
TO-220-2 Full Pack
TO-220FPAC
175°C (Max)
STTH1210DY
STMicroelectronics
DIODE GEN PURP 1KV 12A TO220AC
13.656
Automotive, AEC-Q101
Standard
1000V
12A
2V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
10µA @ 1000V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
STTH12R06DIRG
STMicroelectronics
DIODE GEN PURP 600V 12A TO220AC
16.248
-
Standard
600V
12A
2.9V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
45ns
45µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
RFN20TF6SFH
Rohm Semiconductor
DIODE GEN PURP 600V 20A TO220NFM
12.414
Automotive, AEC-Q101
Standard
600V
20A
1.55V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
TO-220-2
TO-220NFM
150°C (Max)
STTH806DIRG
STMicroelectronics
DIODE GEN PURP 600V 8A TO220AC
14.076
-
Standard
600V
8A
1.85V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
8µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
STTH2002DI
STMicroelectronics
DIODE GEN PURP 200V 20A TO220AC
13.962
-
Standard
200V
20A
1.1V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
40ns
10µA @ 200V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
APT30DQ60BG
Microsemi
DIODE GEN PURP 600V 30A TO247
15.276
-
Standard
600V
30A
2.4V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
25µA @ 600V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
STTH30L06WY
STMicroelectronics
DIODE GEN PURP 600V 30A DO247
14.556
Automotive, AEC-Q101
Standard
600V
30A
1.55V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
90ns
25µA @ 600V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
-40°C ~ 175°C
IDH02G120C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 1200V 2A TO220-2
24.138
CoolSiC™+
Silicon Carbide Schottky
1200V
2A (DC)
1.65V @ 2A
No Recovery Time > 500mA (Io)
0ns
18µA @ 1200V
182pF @ 1V, 1MHz
Through Hole
TO-220-2
PG-TO220-2-1
175°C (Max)
STTH506DTI
STMicroelectronics
DIODE GEN PURP 600V 5A TO220AC
13.098
-
Standard
600V
5A
3.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
6µA @ 600V
-
Through Hole
TO-220-2 Insulated, TO-220AC
TO-220AC ins
175°C (Max)
FFH60UP60S
ON Semiconductor
DIODE GEN PURP 600V 60A TO247
17.334
-
Standard
600V
60A
1.7V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
100µA @ 600V
-
Through Hole
TO-247-2
TO-247-2
-65°C ~ 150°C
VS-30EPH06PBF
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 30A TO247AC
98.628
FRED Pt®
Standard
600V
30A
2.6V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
50µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-65°C ~ 175°C
STTH3012W
STMicroelectronics
DIODE GEN PURP 1.2KV 30A DO247
15.876
-
Standard
1200V
30A
2.25V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
115ns
20µA @ 1200V
-
Through Hole
DO-247-2 (Straight Leads)
DO-247
175°C (Max)
APT30DQ100BG
Microsemi
DIODE GEN PURP 1KV 30A TO247
6.540
-
Standard
1000V
30A
3V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
295ns
100µA @ 1000V
-
Through Hole
TO-247-2
TO-247 [B]
-55°C ~ 175°C
VS-EPU6006LHN3
Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 60A TO247AD
16.860
Automotive, AEC-Q101, FRED Pt®
Standard
600V
60A
1.5V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
110ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AD
-55°C ~ 175°C
STTH30R04G
STMicroelectronics
DIODE GEN PURP 400V 30A D2PAK
20.328
-
Standard
400V
30A
1.45V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
15µA @ 400V
-
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-40°C ~ 175°C