Rohm Semiconductor Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerRohm Semiconductor
Datensätze 814
Seite 22/28
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Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
NCH 600V 76A POWER MOSFET. R607 |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 4V @ 1mA | 260nC @ 10V | ±20V | 6500pF @ 25V | - | 735W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
2.106 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 40A (Tc) | 18V | 117mOhm @ 10A, 18V | 4V @ 4.4mA | 106nC @ 18V | +22V, -6V | 2080pF @ 800V | - | - | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
7.776 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 70A (Tc) | 18V | 39mOhm @ 27A, 18V | 5.6V @ 13.3mA | 104nC @ 18V | +22V, -4V | 1526pF @ 500V | - | 262W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
SCT3022KL IS AN SIC (SILICON CAR |
2.100 |
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- | N-Channel | SiCFET (Silicon Carbide) | 1200V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178nC @ 10V | +22V, -4V | 2879pF @ 800V | - | 427W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
4.986 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 650V | 118A (Tc) | 18V | 22.1mOhm @ 47A, 18V | 5.6V @ 23.5mA | 172nC @ 18V | +22V, -4V | 2884pF @ 500V | - | 427W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
AUTOMOTIVE GRADE N-CHANNEL SIC P |
3.942 |
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Automotive, AEC-Q101 | N-Channel | SiCFET (Silicon Carbide) | 1200V | 95A (Tc) | 18V | 28.6mOhm @ 36A, 18V | 5.6V @ 18.2mA | 178nC @ 18V | +22V, -4V | 2879pF @ 800V | - | 427W | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
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Rohm Semiconductor |
BSM400C12P3G202 IS A CHOPPER MOD |
4.500 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 400A (Tc) | - | - | 5.6V @ 106.8mA | - | +22V, -4V | 17000pF @ 10V | - | 1570W (Tc) | 175°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
BSM600C12P3G201 IS A CHOPPER MOD |
6.804 |
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- | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200V | 600A (Tc) | - | - | 5.6V @ 182mA | - | +22V, -4V | 28000pF @ 10V | - | 2460W (Tc) | 175°C (TJ) | Chassis Mount | Module | Module |
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Rohm Semiconductor |
MOSFET N-CH 60V 0.25A VMT3 |
5.148 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 250mA (Ta) | 2.5V, 10V | 2.4Ohm @ 250mA, 10V | 2.3V @ 1mA | - | ±20V | 15pF @ 25V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VMT3 | SOT-723 |
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Rohm Semiconductor |
MOSFET N-CH 50V 0.2A EMT3 |
8.712 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 1.2V, 4.5V | 2.2Ohm @ 200mA, 4.5V | 1V @ 1mA | - | ±8V | 25pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | EMT3 | SC-75, SOT-416 |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A WEMT6 |
6.696 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | ±10V | 110pF @ 10V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 60V 1.5A TUMT3 |
8.298 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 290mOhm @ 1.5A, 10V | 2.5V @ 1mA | 2nC @ 5V | 20V | 110pF @ 10V | - | 800mW (Ta) | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT6 |
4.320 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 160mOhm @ 2A, 10V | 2.5V @ 1mA | 3.2nC @ 5V | ±20V | 230pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 30V 1.5A WEMT6 |
2.880 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 2.5V, 4.5V | 240mOhm @ 1.5A, 4.5V | 1.5V @ 1mA | 2.2nC @ 4.5V | ±12V | 80pF @ 10V | Schottky Diode (Isolated) | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
1.5V DRIVE PCH MOSFET |
3.204 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Rohm Semiconductor |
MOSFET P-CH 20V 1.1A TSMT3 |
7.200 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.1A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 20V 2.4A TSST8 |
3.526 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 2.4A (Ta) | 1.5V, 4.5V | 105mOhm @ 2.4A, 4.5V | 1V @ 1mA | 6.7nC @ 4.5V | ±10V | 850pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 8-TSST | 8-SMD, Flat Lead |
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Rohm Semiconductor |
MOSFET P-CH 12V 3.5A TUMT6 |
7.146 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 1.5V, 4.5V | 42mOhm @ 3.5A, 4.5V | 1V @ 1mA | 22nC @ 4.5V | -8V | 2700pF @ 6V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
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Rohm Semiconductor |
MOSFET N-CH 20V 1.5A WEMT6 |
4.572 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 1.5V, 4.5V | 180mOhm @ 1.5A, 4.5V | 1V @ 1mA | 1.8nC @ 4.5V | ±10V | 110pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 45V 2A TSMT6 |
5.652 |
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- | N-Channel | MOSFET (Metal Oxide) | 45V | 2A (Ta) | 2.5V, 4.5V | 190mOhm @ 2A, 4.5V | 1.5V @ 1mA | 2.3nC @ 4.5V | ±12V | 150pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 60V 1.5A TSMT6 |
8.262 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.5A (Ta) | 4V, 10V | 290mOhm @ 1.5A, 10V | 2.5V @ 1mA | 3.5nC @ 10V | ±20V | 110pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 30V 3A TSMT6 |
4.590 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 3A (Ta) | 4V, 10V | 75mOhm @ 3A, 10V | 2.5V @ 1mA | 12nC @ 10V | ±20V | 480pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET N-CH 20V 2A WEMT6 |
8.190 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 105mOhm @ 2A, 4.5V | 1V @ 1mA | 2nC @ 4.5V | ±10V | 180pF @ 10V | - | 400mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET N-CH 30V 3.5A TSMT3 |
4.410 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 3.5A (Ta) | 4V, 10V | 50mOhm @ 3.5A, 10V | 2.5V @ 1mA | 3.3nC @ 5V | ±20V | 180pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET P-CH 20V 3A TSMT6 |
3.402 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 2.5V, 4.5V | 80mOhm @ 3A, 4.5V | 2V @ 1mA | 9nC @ 4.5V | ±12V | 800pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 20V 1A WEMT6 |
5.814 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 2.5V, 4.5V | 390mOhm @ 1A, 4.5V | 2V @ 1mA | 2.1nC @ 4.5V | ±12V | 150pF @ 10V | Schottky Diode (Body) | 700mW (Ta) | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
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Rohm Semiconductor |
MOSFET P-CH 30V 2A TSMT3 |
6.156 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4V, 10V | 120mOhm @ 2A, 10V | - | 4.3nC @ 5V | ±20V | 370pF @ 10V | - | 1W (Ta) | - | Surface Mount | TSMT3 | SC-96 |
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Rohm Semiconductor |
MOSFET N-CH 30V 2A TSMT5 |
5.328 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 2.5V, 4.5V | 100mOhm @ 2A, 4.5V | 1.5V @ 1mA | 3.9nC @ 4.5V | ±12V | 175pF @ 10V | Schottky Diode (Isolated) | 900mW (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |
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Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TSMT6 |
2.412 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 215mOhm @ 1.5A, 4.5V | 2V @ 1mA | 3nC @ 4.5V | ±12V | 270pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
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Rohm Semiconductor |
MOSFET P-CH 20V 1.5A TSMT5 |
7.578 |
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- | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 200mOhm @ 1.5A, 4.5V | 2V @ 1mA | 4.2nC @ 4.5V | ±12V | 325pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | 150°C (TJ) | Surface Mount | TSMT5 | SOT-23-5 Thin, TSOT-23-5 |