Rohm Semiconductor Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerRohm Semiconductor
Datensätze 814
Seite 21/28
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Rohm Semiconductor |
NCH 650V 9A POWER MOSFET. R6509 |
7.884 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | 5V @ 230µA | 16.5nC @ 10V | ±20V | 540pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 9A POWER MOSFET. R6509 |
8.406 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 585mOhm @ 2.8A, 10V | 4V @ 230µA | 24nC @ 10V | ±20V | 430pF @ 25V | - | 94W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 11A POWER MOSFET. R651 |
3.942 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 4V @ 320µA | 32nC @ 10V | ±20V | 670pF @ 25V | - | 124W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 11A POWER MOSFET. R651 |
4.860 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 400mOhm @ 3.8A, 10V | 5V @ 320µA | 22nC @ 10V | ±20V | 760pF @ 25V | - | 124W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
R6004JNX IS A POWER MOSFET WITH |
7.866 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 15V | 1.43Ohm @ 2A, 15V | 7V @ 450µA | 10.5nC @ 15V | ±30V | 260pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
RJ1G12BGN IS A POWER MOSFET WITH |
6.264 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 4.5V, 10V | 1.86mOhm @ 50A, 10V | 2.5V @ 2mA | 165nC @ 10V | ±20V | 12500pF @ 20V | - | 178W (Tc) | 150°C (TJ) | Surface Mount | LPTL | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 15A POWER MOSFET. R651 |
7.722 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 4V @ 430µA | 40nC @ 10V | ±20V | 910pF @ 25V | - | 184W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 15A POWER MOSFET. R651 |
2.304 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5nC @ 10V | ±20V | 1050pF @ 25V | - | 184W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
3.942 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
2.970 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 4V @ 630µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 24A POWER MOSFET. R652 |
7.236 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 5V @ 750µA | 45nC @ 10V | ±20V | 1850pF @ 25V | - | 245W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 650V 24A POWER MOSFET. R652 |
5.418 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 185mOhm @ 11.3A, 10V | 4V @ 750µA | 70nC @ 10V | ±20V | 1650pF @ 25V | - | 245W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Rohm Semiconductor |
NCH 600V 12A POWER MOSFET. R601 |
4.752 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 15V | 390mOhm @ 6A, 15V | 7V @ 2.5mA | 28nC @ 15V | ±30V | 900pF @ 100V | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
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Rohm Semiconductor |
R6020JNX IS A POWER MOSFET WITH |
7.362 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45nC @ 15V | ±30V | 1500pF @ 100V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
R6025JNX IS A POWER MOSFET WITH |
5.598 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57nC @ 15V | ±30V | 1900pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 20A POWER MOSFET. R602 |
7.524 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 196mOhm @ 9.5A, 10V | 5V @ 1mA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
R6020JNZ IS A POWER MOSFET FOR S |
8.748 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45nC @ 15V | ±30V | 1500pF @ 100V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
R6020JNZ4 IS A POWER MOSFET WITH |
3.042 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 15V | 234mOhm @ 10A, 15V | 7V @ 3.5mA | 45nC @ 15V | ±30V | 1500pF @ 100V | - | 252W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
2.520 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
R6025JNZ4 IS A POWER MOSFET WITH |
6.084 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57nC @ 15V | ±30V | 1900pF @ 100V | - | 306W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 25A POWER MOSFET; R6025 |
6.660 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 25A (Tc) | 15V | 182mOhm @ 12.5A, 15V | 7V @ 4.5mA | 57nC @ 15V | ±30V | 1900pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
NCH 600V 30A POWER MOSFET. R603 |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 4V @ 1mA | 85nC @ 10V | ±20V | 2100pF @ 25V | - | 305W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 30A POWER MOSFET; R6030 |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74nC @ 15V | ±30V | 2500pF @ 100V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
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Rohm Semiconductor |
R6030JNZ4 IS A POWER MOSFET WITH |
5.688 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74nC @ 15V | ±30V | 2500pF @ 100V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
R6042JNZ4 IS A POWER MOSFET WITH |
4.464 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 42A (Tc) | 15V | 104mOhm @ 21A, 15V | 7V @ 5.5mA | 100nC @ 15V | ±30V | 3500pF @ 100V | - | 495W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 47A POWER MOSFET. R604 |
5.922 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 5V @ 1mA | 100nC @ 10V | ±20V | 4300pF @ 25V | - | 481W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 47A POWER MOSFET. R604 |
5.508 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 72mOhm @ 25.8A, 10V | 4V @ 1mA | 145nC @ 10V | ±20V | 3850pF @ 25V | - | 481W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 650V 47A POWER MOSFET. R654 |
5.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 80mOhm @ 25.8A, 10V | 5V @ 1.72mA | 100nC @ 10V | ±20V | 4100pF @ 25V | - | 480W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 50A POWER MOSFET. R605 |
4.914 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 50A (Tc) | 15V | 83mOhm @ 25A, 15V | 7V @ 5mA | 120nC @ 15V | ±30V | 4500pF @ 100V | - | 615W (Tc) | 150°C (TJ) | Through Hole | TO-247G | TO-247-3 |
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Rohm Semiconductor |
NCH 600V 76A POWER MOSFET. R607 |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 42mOhm @ 44.4A, 10V | 5V @ 1mA | 165nC @ 10V | ±20V | 7400pF @ 25V | - | 735W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |