Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 66/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 30V 7.1A 6TSOP |
4.014 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 7.1A (Ta) | 4.5V, 10V | 25mOhm @ 7.1A, 10V | 2V @ 30µA | 6.6nC @ 5V | ±20V | 750pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3.114 |
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Infineon Technologies |
MOSFET P-CH 30V 6.3A TSOP-6 |
3.400 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 6.3A (Ta) | 4.5V, 10V | 33mOhm @ 6.3A, 10V | 2V @ 30µA | 20.9nC @ 10V | ±20V | 1401pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 20V 7.5A 6TSOP |
8.352 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 2.5V, 4.5V | 22mOhm @ 7.5A, 4.5V | 1.2V @ 30µA | 8.7nC @ 10V | ±12V | 1147pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
CONSUMER |
7.362 |
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Infineon Technologies |
CONSUMER |
4.338 |
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Infineon Technologies |
MOSFET P-CH 60V SOT223-4 |
3.996 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 60V | 1.1A (Ta) | 4.5V, 10V | 750mOhm @ 1.1A, 10V | 2V @ 77µA | 4nC @ 10V | ±20V | 120pF @ 30V | - | 1.8W (Ta), 4.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
TRANSISTOR N-CH |
8.658 |
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Infineon Technologies |
MOSFET N-CHANNEL 750V 4A SOT223 |
8.838 |
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- | N-Channel | MOSFET (Metal Oxide) | 750V | 4A (Tc) | 10V | 2.1Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8nC @ 10V | ±20V | 163pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Infineon Technologies |
MOSFET N-CH 500V 4.3A TO251 |
7.758 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 231pF @ 100V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8PQFN |
4.878 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 16mOhm @ 17A, 10V | 2.35V @ 25µA | 7.5nC @ 4.5V | ±20V | 560pF @ 25V | - | 2.6W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3.3x3.3), Power33 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 82A 5X6 PQFN |
8.676 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta), 82A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.35V @ 50µA | 32nC @ 10V | ±20V | 2487pF @ 10V | - | 3.6W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 2A 6TSOP |
8.136 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 2A (Ta) | 4.5V, 10V | 220mOhm @ 2A, 10V | 1.8V @ 218µA | 14.3nC @ 10V | ±20V | 329pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CHANNEL 34V 13A 8TDSON |
8.406 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 13A (Ta) | 4.5V, 10V | 9mOhm @ 8A, 10V | 2V @ 250µA | 20nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 250V 100MA SOT223 |
2.556 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 250V | 100mA (Ta) | 0V, 10V | 14Ohm @ 100mA, 10V | 1V @ 56µA | 3.5nC @ 5V | ±20V | 76pF @ 25V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH TO252-3 |
8.082 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 700V | 4A (Tc) | 10V | 2Ohm @ 1A, 10V | 3.5V @ 70µA | 7.8nC @ 10V | ±20V | 163pF @ 100V | Super Junction | 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 1A SAWN ON FOIL |
7.614 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 1A (Tj) | 10V | 50mOhm @ 2A, 10V | 2.2V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Infineon Technologies |
MOSFET P-CH 30V 39.6A TSDSON-8 |
4.788 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9A (Ta), 39.6A (Tc) | 6V, 10V | 18mOhm @ 20A, 10V | 3.1V @ 48µA | 30nC @ 10V | ±25V | 2220pF @ 15V | - | 2.1W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 5.2A TO252-3 |
4.338 |
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- | N-Channel | MOSFET (Metal Oxide) | 700V | 5.2A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 53W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
TRANSISTOR N-CH |
5.202 |
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Infineon Technologies |
MOSFET N-CH 800V 1.5A SOT223 |
3.654 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 20µA | 4nC @ 10V | ±20V | 80pF @ 500V | - | 6W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | TO-261-3 |
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Infineon Technologies |
MOSFET N-CH 30V 40A TO252 |
3.384 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8 |
3.564 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 40A (Tc) | 6V, 10V | 12mOhm @ 20A, 10V | 3.1V @ 73µA | 45nC @ 10V | ±25V | 3360pF @ 15V | - | 2.1W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
8.172 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14nC @ 4.5V | ±25V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 55V 28A DPAK |
3.690 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 28A (Tc) | 4V, 10V | 40mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | ±16V | 880pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 3.1A TO-251-3 |
3.204 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 49W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
CONSUMER |
7.812 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT23 |
3.960 |
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SIPMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 0V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.8nC @ 7V | ±20V | 68pF @ 10V | Depletion Mode | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 7A 8-SOIC |
6.228 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 30mOhm @ 7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
CONSUMER |
3.618 |
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