Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 56/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 75V 76A TO262 |
8.712 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 76A (Tc) | 6V, 10V | 8.4mOhm @ 46A, 10V | 3.7V @ 100µA | 109nC @ 10V | ±20V | 4020pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 500V 9A TO-262 |
7.056 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9A (Tc) | 10V | 399mOhm @ 4.9A, 10V | 3.5V @ 330µA | 23nC @ 10V | ±20V | 890pF @ 100V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 36A TO220AB |
18.324 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 36A (Tc) | 10V | 26.5mOhm @ 22A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1770pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET NCH 40V 130A IPAK |
18.732 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 4.9mOhm @ 42A, 10V | 2.5V @ 100µA | 56nC @ 4.5V | ±16V | 3810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 90A D2PAK |
7.038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | ±20V | 2672pF @ 16V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 195A TO262 |
8.874 |
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HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 6V, 10V | 2.6mOhm @ 100A, 10V | 3.7V @ 250µA | 407nC @ 10V | ±20V | 13660pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET NCH 300V 19A TO262 |
8.304 |
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Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 300V | 19A (Tc) | 10V | 185mOhm @ 11A, 10V | 5V @ 150µA | 57nC @ 10V | ±20V | 2340pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-901 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 100A TO220-3 |
6.672 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 10V | 3.4mOhm @ 100A, 10V | 3.8V @ 155µA | 117nC @ 10V | ±20V | 8130pF @ 37.5V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO220AB |
8.442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 75V 195A D2PAK |
6.768 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 195A (Tc) | 10V | 3mOhm @ 140A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 9370pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 2.3A SOT23 |
7.218 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.8V, 2.5V | 57mOhm @ 2.3A, 2.5V | 750mV @ 11µA | 1.7nC @ 2.5V | ±8V | 529pF @ 10V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
CONSUMER |
5.382 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 3.6A (Tc) | 13V | 2Ohm @ 600mA, 13V | 3.5V @ 50µA | 6nC @ 10V | ±20V | 124pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Infineon Technologies |
MOSFET N-CH 20V 7.5A TSOP-6 |
7.380 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 2.5V, 4.5V | 22mOhm @ 7.5A, 4.5V | 1.2V @ 30µA | 8.7nC @ 4.5V | ±12V | 1147pF @ 10V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 500V 1.7A PG-TO-252 |
7.380 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 1.7A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 18W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8DSO |
6.678 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 6.5mOhm @ 16A, 10V | 2V @ 250µA | 40nC @ 10V | ±20V | 3100pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 13A TO252-3 |
5.958 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 13A (Tc) | 10V | 78mOhm @ 13A, 10V | 4V @ 12µA | 11nC @ 10V | ±20V | 716pF @ 50V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 2.3A SOT223 |
4.482 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 2.3A (Ta) | 4.5V, 10V | 160mOhm @ 2.3A, 10V | 1.8V @ 218µA | 13.1nC @ 10V | ±20V | 315pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT-23-3 |
7.038 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 4.5V, 10V | 220mOhm @ 1.6A, 10V | 2.5V @ 25µA | 2.5nC @ 4.5V | ±16V | 290pF @ 25V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 30V 2A MICRO8 |
4.770 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 200mOhm @ 1.2A, 10V | 1V @ 250µA | 11nC @ 10V | ±20V | 180pF @ 25V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
CONSUMER |
8.028 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 2.6A (Tc) | 13V | 3Ohm @ 400mA, 13V | 3.5V @ 30µA | 4.3nC @ 10V | ±20V | 84pF @ 100V | - | 5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-SOT223 | SOT-223-3 |
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Infineon Technologies |
MOSFET N-CH 25V 30A DPAK |
8.748 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 12.8mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 6-TSOP |
8.334 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 2.2A 8-SOIC |
8.388 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 2.2A (Ta) | 2.7V, 4.5V | 270mOhm @ 1.2A, 4.5V | 700mV @ 250µA | 7.8nC @ 4.5V | ±12V | 260pF @ 15V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO252-3 |
6.480 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 2.2V @ 250µA | 18nC @ 10V | ±20V | 1900pF @ 15V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 42A D2PAK |
2.034 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 12.6mOhm @ 21A, 10V | 2V @ 37µA | 30.5nC @ 10V | ±20V | 1130pF @ 25V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 34V 44A 8TDSON |
2.466 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 34V | 12A (Ta), 44A (Tc) | 4.5V, 10V | 9.2mOhm @ 20A, 10V | 2V @ 250µA | 15nC @ 10V | ±20V | 1110pF @ 15V | - | 2.5W (Ta), 27W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-5 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 700V 6A TO252-3 |
8.910 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | ±16V | 211pF @ 400V | - | 30.5W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 400V 170MA SOT-223 |
7.488 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 400V | 170mA (Ta) | 4.5V, 10V | 25Ohm @ 170mA, 10V | 2.3V @ 94µA | 5.9nC @ 10V | ±20V | 154pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC |
5.814 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 1.8A TO-263 |
2.754 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 1.8A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 5.5V @ 80µA | 9.5nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |