Infineon Technologies Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 220/225
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
MOSFET P-CH TO220-3 |
8.334 |
|
Automotive, AEC-Q101, OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 5.2mOhm @ 80A, 10V | 4V @ 250µA | 151nC @ 10V | ±20V | 10300pF @ 25V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V DIRECTFETL8 |
5.598 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 40V DIRECTFETL8 |
2.448 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V TO-220AB |
4.554 |
|
- | - | - | - | - | 4V, 10V | - | - | - | ±16V | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 57A D2PAK |
5.418 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
8.478 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 60V DIE ON WAFER |
8.694 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER |
3.672 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 150V DIE ON WAFER |
5.274 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V DIE ON FILM |
5.166 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V DIE ON WAFER |
3.580 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET NCH 100V 58A PQFN |
7.524 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 58A (Tc) | 10V | 14.5mOhm @ 35A, 10V | 4V @ 100µA | 74nC @ 10V | ±20V | 3050pF @ 25V | - | 4.3W (Ta), 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET NCH 100V 23A PQFN |
4.266 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 23A (Ta), 157A (Tc) | 10V | 3.9mOhm @ 50A, 10V | 3.6V @ 250µA | 74nC @ 10V | ±20V | 3120pF @ 50V | - | 4W (Ta), 195W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET NCH 100V 128A TO247AC |
5.976 |
|
Automotive, AEC-Q101, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 128A (Tc) | 10V | 6mOhm @ 77A, 10V | 4V @ 150µA | 188nC @ 10V | ±20V | 7120pF @ 50V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC |
4.482 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta), 12A (Tc) | 10V | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | - | 900pF @ 10V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
2.466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W | -55°C ~ 150°C (TA) | Surface Mount | - | - |
|
|
|
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252 |
2.304 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 83W (Tc) | -55°C ~ 155°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET NCH 600V 3.2A TO251 |
5.004 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | Super Junction | 28.4W (Tc) | -55°C ~ 155°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET NCH 600V 10.6A TO252 |
3.348 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 10.6A (Tc) | 10V | 380mOhm @ 3.8A, 10V | 3.5V @ 300µA | 32nC @ 10V | ±20V | 700pF @ 100V | Super Junction | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V TO251-3 |
5.562 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 1.9A (Tc) | 10V | 2.8Ohm @ 1.1A, 10V | 3.9V @ 120µA | 12nC @ 10V | ±20V | 290pF @ 100V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 800V TO251-3 |
7.344 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 3.9A (Tc) | 10V | 1.4Ohm @ 2.3A, 10V | 3.9V @ 240µA | 23nC @ 10V | ±20V | 570pF @ 100V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH TO-220AB |
7.542 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 160A (Tc) | 10V | 4.2mOhm @ 75A, 10V | 4V @ 150µA | 120nC @ 10V | ±20V | 4520pF @ 50V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 16SOIC |
5.760 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 16SOIC |
6.624 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8.982 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
8.712 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
4.572 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
2.538 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
3.168 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH WAFER |
4.086 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |