Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 186/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
3.598 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 4.5mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 5700pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
8.604 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
5.544 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.7mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | ±20V | 3160pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
7.344 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | ±20V | 2620pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
4.698 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 10.7mOhm @ 60A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2075pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
6.372 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 4.7mOhm @ 80A, 10V | 2V @ 250µA | 190nC @ 10V | ±20V | 5000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
8.118 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.1mOhm @ 63A, 10V | 4V @ 110µA | 240nC @ 10V | ±20V | 10760pF @ 25V | - | 165W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 90A TO252-3 |
7.002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 6V, 10V | 6.8mOhm @ 90A, 10V | 3.5V @ 90µA | 68nC @ 10V | ±20V | 4910pF @ 50V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 80A TO252-3 |
5.868 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 6V, 10V | 8.2mOhm @ 73A, 10V | 3.5V @ 75µA | 55nC @ 10V | ±20V | 3980pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 50A TO252-3 |
3.078 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 50A (Tc) | 4.5V, 10V | 8.8mOhm @ 50A, 10V | 2V @ 16µA | 28nC @ 10V | ±20V | 2100pF @ 20V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 73A TO252-3 |
7.524 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 73A (Tc) | 6V, 10V | 9.6mOhm @ 46A, 10V | 3.5V @ 46µA | 35nC @ 10V | ±20V | 2410pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 40A TO252-3 |
8.388 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 40A (Tc) | 4.5V, 10V | 10.5mOhm @ 40A, 10V | 2V @ 14µA | 23nC @ 10V | ±20V | 1900pF @ 20V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 67A TO252-3 |
7.164 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 65nC @ 10V | ±20V | 4320pF @ 50V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 85V 67A TO252-3 |
3.562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 67A (Tc) | 10V | 12.4mOhm @ 67A, 10V | 4V @ 83µA | 64nC @ 10V | ±20V | 4340pF @ 40V | - | 125W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 80V 45A TO252-3 |
6.498 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 45A (Tc) | 6V, 10V | 13.5mOhm @ 45A, 10V | 3.5V @ 33µA | 25nC @ 10V | ±20V | 1730pF @ 40V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A TO252-3 |
3.708 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10nC @ 10V | ±20V | 293pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 19A TO252-3 |
2.034 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 4.5V, 10V | 64mOhm @ 13A, 10V | 2V @ 14µA | 13nC @ 10V | ±20V | 354pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 30A TO252-3 |
2.700 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 4.5V, 10V | 16mOhm @ 30A, 10V | 2V @ 10µA | 15nC @ 10V | ±20V | 1200pF @ 20V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 53A TO252-3 |
8.442 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 53A (Tc) | 10V | 16mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | ±20V | 3220pF @ 50V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 85V 53A TO252-3 |
7.650 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 53A (Tc) | 10V | 16mOhm @ 53A, 10V | 4V @ 61µA | 48nC @ 10V | ±20V | 3230pF @ 40V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 40V 30A TO252-3 |
4.554 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 30A (Tc) | 10V | 17mOhm @ 30A, 10V | 4V @ 10µA | 11nC @ 10V | ±20V | 880pF @ 20V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 85V 35A TO252-3 |
7.920 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 85V | 35A (Tc) | 10V | 25mOhm @ 35A, 10V | 4V @ 39µA | 31nC @ 10V | ±20V | 2070pF @ 40V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 29A TO252-3 |
2.754 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 13A, 10V | 4V @ 26µA | 18nC @ 10V | ±20V | 513pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
7.002 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 35mOhm @ 13A, 10V | 2V @ 26µA | 24nC @ 10V | ±20V | 621pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3 |
5.076 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 6.7mOhm @ 30A, 10V | 2V @ 85µA | 68nC @ 10V | ±20V | 1900pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
6.120 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 23mOhm @ 21A, 10V | 4V @ 50µA | 32nC @ 10V | ±20V | 901pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 27A TO252-3 |
5.364 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 27A (Tc) | 10V | 33mOhm @ 27A, 10V | 4V @ 29µA | 24nC @ 10V | ±20V | 1570pF @ 50V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 20A TO252-3 |
3.562 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 20A (Tc) | 10V | 49mOhm @ 20A, 10V | 4V @ 20µA | 16nC @ 10V | ±20V | 1090pF @ 50V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3 |
5.526 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 50A (Tc) | 10V | 14.4mOhm @ 32A, 10V | 4V @ 80µA | 52nC @ 10V | ±20V | 1485pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3 |
7.488 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 1800pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |