Infineon Technologies Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerInfineon Technologies
Datensätze 6.749
Seite 128/225
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 560V 11.6A TO-220 |
2.142 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 11.6A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 49nC @ 10V | ±20V | 1200pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A TO220FP |
6.156 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A TO-220AB |
5.652 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 560V 7.6A TO-220AB |
2.772 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | 750pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 560V 7.6A TO220FP |
8.118 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 7.6A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 3.9V @ 350µA | 32nC @ 10V | ±20V | 750pF @ 25V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET P-CH 20V 6A 6-TSOP |
40.472 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 2.5V, 4.5V | 41mOhm @ 6A, 4.5V | 1.2V @ 40µA | 20nC @ 4.5V | ±12V | 1007pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 4.7A 6-TSOP |
2.078 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 2.5V, 4.5V | 67mOhm @ 4.7A, 4.5V | 1.2V @ 25µA | 12.4nC @ 4.5V | ±12V | 654pF @ 15V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 5.5A 6-TSOP |
8.712 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 5.5A (Ta) | 4.5V, 10V | 43mOhm @ 5.5A, 10V | 2V @ 40µA | 29nC @ 10V | ±20V | 805pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSOP-6-6 | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 20V 14.9A 8-SOIC |
8.190 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 14.9A (Ta) | 2.5V, 4.5V | 8mOhm @ 14.9A, 4.5V | 1.2V @ 250µA | 128nC @ 4.5V | ±12V | 5962pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 9A 8-SOIC |
6.156 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 9A (Ta) | 2.5V, 4.5V | 21mOhm @ 9A, 4.5V | 1.2V @ 100µA | 50.4nC @ 4.5V | ±12V | 2265pF @ 15V | - | 2.35W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 12.6A 8DSO |
8.046 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 12.6A (Ta) | 4.5V, 10V | 8mOhm @ 14.9A, 10V | 2V @ 250µA | 136nC @ 10V | ±20V | 5890pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 8.9A 8-SOIC |
2.718 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 8.9A (Ta) | 4.5V, 10V | 21mOhm @ 8.9A, 10V | 2V @ 100µA | 69nC @ 10V | ±20V | 1754pF @ 25V | - | 2.35W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 11.1A 8-SOIC |
3.564 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 11.1A (Ta) | 4.5V, 10V | 13mOhm @ 11.1A, 10V | 2V @ 42µA | 21nC @ 5V | ±20V | 1280pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 13A 8-SOIC |
8.424 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 7.8mOhm @ 13A, 10V | 2V @ 80µA | 33.7nC @ 5V | ±20V | 2213pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 12.7A 8-SOIC |
5.868 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12.7A (Ta) | 4.5V, 10V | 10mOhm @ 12.7A, 10V | 2V @ 55µA | 26.2nC @ 5V | ±20V | 1640pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
2.070 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 410pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223 |
6.066 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20nC @ 10V | ±20V | 460pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 100V 0.68A SOT223 |
2.754 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 100V | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4nC @ 10V | ±20V | 146pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 0.43A SOT223 |
3.960 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1nC @ 10V | ±20V | 262pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 250V 0.19A SOT-89 |
5.022 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 250V | 190mA (Ta) | 2.8V, 10V | 12Ohm @ 190mA, 10V | 2V @ 130µA | 6.1nC @ 10V | ±20V | 104pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89 | TO-243AA |
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Infineon Technologies |
MOSFET P-CH 20V 580MA SOT-323 |
6.930 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 580mA (Ta) | 2.5V, 4.5V | 550mOhm @ 580mA, 4.5V | 1.2V @ 3.5µA | 1.38nC @ 4.5V | ±12V | 89.9pF @ 15V | - | 520mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET P-CH 20V 390MA SOT-323 |
3.600 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 390mA (Ta) | 2.5V, 4.5V | 1.2Ohm @ 390mA, 4.5V | 1.2V @ 1.5µA | 0.62nC @ 4.5V | ±12V | 56pF @ 15V | - | 250mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
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Infineon Technologies |
MOSFET N-CH 55V 540MA SOT-23 |
112.472 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 540mA (Ta) | 4.5V, 10V | 650mOhm @ 270mA, 10V | 2V @ 2.7µA | 2.26nC @ 10V | ±20V | 75pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 60V 330MA SOT-23 |
7.506 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 330mA (Ta) | 4.5V, 10V | 2Ohm @ 330mA, 10V | 2V @ 80µA | 3.57nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 20V 1.5A SOT-363 |
2.070 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 20V | 1.5A (Ta) | 2.5V, 4.5V | 175mOhm @ 1.5A, 4.5V | 1.2V @ 8µA | 5.7nC @ 4.5V | ±12V | 228pF @ 15V | - | 560mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK |
6.714 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 80A (Tc) | 4.5V, 10V | 4.6mOhm @ 55A, 10V | 2V @ 50µA | 25nC @ 5V | ±20V | 3110pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
6.048 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 5.9mOhm @ 30A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2653pF @ 15V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A D2PAK |
4.896 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 8.9mOhm @ 30A, 10V | 2V @ 20µA | 13nC @ 5V | ±20V | 1642pF @ 15V | - | 63W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 30A D2PAK |
8.442 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 30A (Tc) | 4.5V, 10V | 13.6mOhm @ 30A, 10V | 2V @ 20µA | 8.3nC @ 5V | ±20V | 1043pF @ 15V | - | 46W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 50A DPAK |
8.154 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 50A (Tc) | 4.5V, 10V | 3.8mOhm @ 50A, 10V | 2V @ 80µA | 41nC @ 5V | ±20V | 5199pF @ 15V | - | 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |