GeneSiC Semiconductor Gleichrichter - Arrays
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Arrays
HerstellerGeneSiC Semiconductor
Datensätze 906
Seite 9/31
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodenkonfiguration | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Strom - Durchschnitt gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Betriebstemperatur - Verbindungsstelle | Montagetyp | Paket / Fall | Lieferantengerätepaket |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
DIODE MODULE 40V 200A 2TOWER |
3.006 |
|
- | 1 Pair Common Anode | Schottky | 40V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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|
GeneSiC Semiconductor |
DIODE MODULE 45V 200A 2TOWER |
7.470 |
|
- | 1 Pair Common Anode | Schottky | 45V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 2TOWER |
7.758 |
|
- | 1 Pair Common Anode | Schottky | 80V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 200A 3TOWER |
4.122 |
|
- | 1 Pair Common Anode | Schottky, Reverse Polarity | 100V | 200A (DC) | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 200A 3TOWER |
6.138 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 200A 3TOWER |
6.642 |
|
- | 1 Pair Common Anode | Schottky | 20V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 200A 3TOWER |
3.402 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 200A 3TOWER |
5.220 |
|
- | 1 Pair Common Anode | Schottky | 30V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 200A 3TOWER |
6.390 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 200A 3TOWER |
5.418 |
|
- | 1 Pair Common Anode | Schottky | 45V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 60V 200A 3TOWER |
3.456 |
|
- | 1 Pair Common Cathode | Schottky | 60V | 200A (DC) | 800mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 60V 200A 3TOWER |
8.298 |
|
- | 1 Pair Common Anode | Schottky | 60V | 200A (DC) | 800mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 3TOWER |
3.942 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 200A (DC) | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 200A 3TOWER |
7.758 |
|
- | 1 Pair Common Anode | Schottky | 80V | 200A (DC) | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 100A 2 TOWER |
7.848 |
|
- | 1 Pair Common Anode | Schottky | 150V | 100A | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 150V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 100A 2 TOWER |
4.518 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 100A | 920mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 100A 2 TOWER |
7.110 |
|
- | 1 Pair Common Anode | Schottky | 200V | 100A | 920mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 100A 3 TOWER |
8.136 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 100A | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 100A 3 TOWER |
4.932 |
|
- | 1 Pair Common Anode | Schottky | 150V | 100A | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 100A 3 TOWER |
8.118 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 100A | 920mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 100A 3 TOWER |
2.178 |
|
- | 1 Pair Common Anode | Schottky | 200V | 100A | 920mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN 1.2KV 150A 3 TOWER |
3.060 |
|
- | 1 Pair Series Connection | Standard | 1200V | 150A | 1.1V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN 1.4KV 150A 3 TOWER |
5.742 |
|
- | 1 Pair Series Connection | Standard | 1400V | 150A | 1.1V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN 1.6KV 150A 3 TOWER |
5.364 |
|
- | 1 Pair Series Connection | Standard | 1600V | 150A | 1.1V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 150A 3 TOWER |
5.778 |
|
- | 1 Pair Series Connection | Standard | 600V | 150A | 1.1V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 150A 3 TOWER |
6.606 |
|
- | 1 Pair Series Connection | Standard | 800V | 150A | 1.1V @ 150A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 100A 2TOWER |
5.796 |
|
- | 1 Pair Common Cathode | Standard | 50V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 100A 2TOWER |
4.788 |
|
- | 1 Pair Common Anode | Standard | 50V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 100A 2TOWER |
7.110 |
|
- | 1 Pair Common Cathode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 100A 2TOWER |
3.402 |
|
- | 1 Pair Common Anode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |