GeneSiC Semiconductor Gleichrichter - Arrays
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Arrays
HerstellerGeneSiC Semiconductor
Datensätze 906
Seite 10/31
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodenkonfiguration | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Strom - Durchschnitt gleichgerichtet (Io) (pro Diode) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Betriebstemperatur - Verbindungsstelle | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
DIODE MODULE 200V 100A 2TOWER |
4.824 |
|
- | 1 Pair Common Cathode | Standard | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 200V 100A 2TOWER |
4.014 |
|
- | 1 Pair Common Anode | Standard | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 400V 100A 2TOWER |
6.696 |
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- | 1 Pair Common Cathode | Standard | 400V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 400V 100A 2TOWER |
4.104 |
|
- | 1 Pair Common Anode | Standard | 400V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 600V 100A 2TOWER |
5.076 |
|
- | 1 Pair Common Cathode | Standard | 600V | 100A (DC) | 1.7V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 600V 100A 2TOWER |
4.392 |
|
- | 1 Pair Common Anode | Standard | 600V | 100A (DC) | 1.7V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 110ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 300A 2TOWER |
2.682 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 300A (DC) | 840mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 8mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 150A 2 TOWER |
7.812 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 150A | 880mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 150V | -40°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 150A 2 TOWER |
4.896 |
|
- | 1 Pair Common Anode | Schottky | 150V | 150A | 880mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 150V | -40°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 150A 2 TOWER |
6.030 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 150A | 920mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | -40°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 150A 2 TOWER |
5.346 |
|
- | 1 Pair Common Anode | Schottky | 200V | 150A | 920mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | -40°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 80A TO249AB |
8.316 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 80A | 880mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | TO-249AB | TO-249AB |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 80A TO249AB |
2.880 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 80A | 920mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | TO-249AB | TO-249AB |
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GeneSiC Semiconductor |
DIODE MODULE 40V 300A 3TOWER |
5.166 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 300A (DC) | 750mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 45V 300A 3TOWER |
2.664 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 300A (DC) | 750mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 45V 300A 3TOWER |
6.840 |
|
- | 1 Pair Common Anode | Schottky | 45V | 300A (DC) | 750mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 35V 400A 2TOWER |
3.762 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 400A (DC) | 700mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 35V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 40V 400A 2TOWER |
7.722 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 400A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 2TOWER |
6.336 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 2TOWER |
3.978 |
|
- | 1 Pair Common Anode | Schottky | 100V | 200A (DC) | 1.3V @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 20V 400A 2TOWER |
4.122 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 400A (DC) | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 20V 400A 2TOWER |
3.222 |
|
- | 1 Pair Common Anode | Schottky | 20V | 400A (DC) | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 30V 400A 2TOWER |
2.934 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 400A (DC) | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 30V 400A 2TOWER |
7.542 |
|
- | 1 Pair Common Anode | Schottky | 30V | 400A (DC) | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 45V 400A 2TOWER |
3.978 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 400A (DC) | 650mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 60V 400A 2TOWER |
8.622 |
|
- | 1 Pair Common Anode | Schottky | 60V | 400A (DC) | 800mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 80V 400A 2TOWER |
7.830 |
|
- | 1 Pair Common Anode | Schottky | 80V | 400A (DC) | 840mV @ 200A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 300A 3TOWER |
3.816 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 300A (DC) | 880mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 300A 3TOWER |
7.578 |
|
- | 1 Pair Common Anode | Schottky | 100V | 300A (DC) | 880mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 20V 300A 3TOWER |
6.390 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 300A (DC) | 750mV @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |