SIZ328DT-T1-GE3 Datenblatt
SIZ328DT-T1-GE3 Datenblatt
Total Pages: 14
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Vishay Siliconix
Dieses Datenblatt behandelt 1 Teilenummern:
SIZ328DT-T1-GE3
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Hersteller Vishay Siliconix Serie TrenchFET® Gen IV FET-Typ 2 N-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 11.1A (Ta), 25.3A (Tc), 15A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs 15mOhm @ 5A, 10V, 10mOhm @ 5A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 10V, 11.3nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 325pF @ 10V, 600pF @ 10V Leistung - max 2.9W (Ta), 15W (Tc), 3.6W (Ta), 16.2W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-PowerWDFN Lieferantengerätepaket 8-Power33 (3x3) |
