Vishay Semiconductor Diodes Division Transistoren - FETs, MOSFETs - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 13
Seite 1/1
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
POWER MODULE 100V 435A SOT-227 |
6.912 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 435A (Tc) | 10V | 2.15mOhm @ 200A, 10V | 3.8V @ 750µA | 375nC @ 10V | ±20V | 17300pF @ 25V | - | 652W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 190A SOT227 |
8.856 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 190A | 10V | 6.5mOhm @ 180A, 10V | 4.35V @ 250µA | 250nC @ 10V | ±20V | 10700pF @ 25V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
SINGLE SWITCH PWR MODULE SOT-227 |
7.416 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 400A (Tc) | 10V | 2.75mOhm @ 200A, 10V | 5.4V @ 1mA | 250nC @ 10V | ±20V | 13700pF @ 25V | - | 909W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
SINGLE SWITCH PWR MODULE SOT-227 |
6.786 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 287A (Tc) | 10V | 4.7mOhm @ 200A, 10V | 4.3V @ 1mA | 250nC @ 10V | ±20V | 16500pF @ 100V | - | 937W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 40A SOT-227 |
5.544 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 40A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420nC @ 10V | ±20V | 6900pF @ 25V | - | 543W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 200V 108A |
2.466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 108A (Tc) | 10V | 14mOhm @ 80A, 10V | 5.5V @ 250µA | 161nC @ 10V | ±30V | 10720pF @ 50V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 72A SOT-227 |
3.924 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 72A (Tc) | 10V | 80mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | 10000pF @ 25V | - | 1136W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 200V 220A SOT-227 |
5.058 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | 220A (Tc) | 10V | 7mOhm @ 150A, 10V | 5.1V @ 500µA | 350nC @ 10V | ±30V | 21000pF @ 50V | - | 789W (Tc) | -55°C ~ 175°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227 |
7.722 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.5mOhm @ 108A, 10V | 4V @ 250µA | 380nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 38A SOT-227 |
4.482 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 38A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420nC @ 10V | ±20V | 6900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 57A SOT-227 |
66 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 57A (Tc) | 10V | 80mOhm @ 34A, 10V | 4V @ 250µA | 338nC @ 10V | ±20V | 10000pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 500V 38A SOT-227 |
4.212 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 38A (Tc) | 10V | 130mOhm @ 23A, 10V | 4V @ 250µA | 420nC @ 10V | ±20V | 6900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
Vishay Semiconductor Diodes Division |
MOSFET N-CH 100V 180A SOT-227 |
3.562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6.5mOhm @ 180A, 10V | 4V @ 250µA | 380nC @ 10V | ±20V | 10700pF @ 25V | - | 480W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |