Vishay Semiconductor Diodes Division Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 11.281
Seite 326/377
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO220AC |
8.046 |
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- | Standard | 600V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | - | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO220AC |
7.056 |
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- | Standard | 600V | 8A | 3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A ITO220AC |
6.102 |
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- | Standard | 600V | 10A | - | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | - | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A ITO220AC |
8.802 |
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- | Standard | 600V | 8A | 3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack, Isolated Tab | ITO-220AC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 5A DO204AR |
3.816 |
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- | Schottky | 100V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 550µA @ 100V | - | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 80A TO247AC |
5.526 |
|
- | Standard | 1200V | 80A | 1.17V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A TO220FP |
2.808 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO220FP |
6.480 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO220FP |
6.480 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO220FP |
5.472 |
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- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | - | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO220FP |
4.662 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220AC |
4.355 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC |
2.520 |
|
- | Standard | 200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
7.596 |
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- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
2.358 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 60A TO247AC |
8.352 |
|
- | Standard | 400V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 60A TO247AC |
4.554 |
|
- | Standard | 600V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 60A TO247AC |
4.824 |
|
- | Standard | 1000V | 60A | 1.4V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A TO247AC |
5.328 |
|
- | Standard | 200V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A TO247AC |
8.550 |
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- | Standard | 400V | 80A | 1.25V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 190ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 80A TO247AC |
7.632 |
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- | Standard | 1000V | 80A | 1.35V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220FP |
7.776 |
|
- | Standard | 200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO220FP |
4.734 |
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- | Standard | 1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1000V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP |
5.706 |
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- | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220AC |
2.898 |
|
- | Standard | 200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220FP |
5.346 |
|
- | Standard | 800V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
8.496 |
|
- | Standard | 1200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220FP |
7.578 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC |
2.970 |
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- | Standard | 1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
4.680 |
|
- | Standard | 200V | 60A | 1.3V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |