Vishay Semiconductor Diodes Division Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 11.281
Seite 309/377
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Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
8.496 |
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- | Standard | 100V | 1A | 1.05V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 100V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
8.190 |
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- | Standard | 150V | 1A | 1.05V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO214AC |
2.700 |
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- | Standard | 150V | 1A | 1.05V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 150V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
7.920 |
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- | Standard | 200V | 1A | 1.05V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
5.040 |
|
- | Standard | 200V | 1A | 1.05V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
4.734 |
|
- | Standard | 100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A DO214AA |
3.942 |
|
- | Standard | 100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 100V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
2.682 |
|
- | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A DO214AA |
4.914 |
|
- | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 150V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
3.402 |
|
- | Standard | 200V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
6.552 |
|
- | Standard | 200V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO214AB |
6.210 |
|
- | Standard | 100V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 100V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 3A DO214AB |
3.114 |
|
- | Standard | 150V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 150V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO214AB |
2.268 |
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- | Standard | 200V | 3A | 1.05V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 5µA @ 200V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A TO277A |
2.214 |
|
eSMP® | Standard | 600V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 10µA @ 600V | - | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO214AC |
7.344 |
|
- | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO214AC |
5.994 |
|
- | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO214AC |
2.250 |
|
- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 15pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
8.550 |
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- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1A DO214AC |
5.742 |
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- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO214AC |
2.286 |
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- | Standard | 1000V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
3.330 |
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- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 2A DO214AA |
3.240 |
|
- | Standard | 600V | 2A | 1.6V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 600V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 500MA DO213 |
8.910 |
|
SUPERECTIFIER® | Standard | 100V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 100V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 500MA DO213 |
6.876 |
|
SUPERECTIFIER® | Standard | 150V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 150V | - | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 500MA DO213 |
7.110 |
|
SUPERECTIFIER® | Standard | 200V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 500MA DO213 |
4.734 |
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SUPERECTIFIER® | Standard | 300V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 500MA DO213 |
2.934 |
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SUPERECTIFIER® | Standard | 400V | 500mA | 1.35V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 500MA DO213AA |
6.606 |
|
SUPERECTIFIER® | Standard | 50V | 500mA | 1.25V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 50V | 7pF @ 4V, 1MHz | Surface Mount | DO-213AA (Glass) | DO-213AA (GL34) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1A DO213AB |
6.930 |
|
SUPERECTIFIER® | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 15pF @ 4V, 1MHz | Surface Mount | DO-213AB, MELF (Glass) | DO-213AB | -65°C ~ 175°C |