Vishay Semiconductor Diodes Division Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerVishay Semiconductor Diodes Division
Datensätze 11.281
Seite 173/377
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
2.682 |
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FRED Pt® | Standard | 200V | 8A | 970mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
4.734 |
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FRED Pt® | Standard | 200V | 8A | 970mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 8A D-PAK |
5.292 |
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FRED Pt® | Standard | 200V | 8A | 970mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 24ns | 5µA @ 200V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
RECTIFIER BARRIER SCHOTTKY FP5X6 |
7.128 |
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* | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 5A 200V TO-263AB |
6.948 |
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- | Schottky | 200V | 5A | 1.6V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A TO277A |
3.600 |
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eSMP® | Avalanche | 200V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 200V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
3.654 |
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eSMP® | Avalanche | 400V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
3.600 |
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eSMP® | Avalanche | 600V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 2A TO277A |
7.920 |
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eSMP® | Avalanche | 600V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 600V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 2A TO277A |
3.472 |
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eSMP® | Avalanche | 400V | 2A (DC) | 1.6V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 10µA @ 400V | 77pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 10A TO263AB |
6.498 |
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TMBS® | Schottky | 45V | 10A (DC) | 680mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB | 200°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
4.752 |
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- | Avalanche | 400V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 1µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
5.472 |
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- | Avalanche | 1000V | 3A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | 140°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
7.704 |
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- | Avalanche | 600V | 3A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
3.654 |
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- | Avalanche | 400V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
6.498 |
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- | Avalanche | 200V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
4.392 |
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- | Avalanche | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 7.5µs | 1µA @ 200V | 60pF @ 4V, 1MHz | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 3A SOD64 |
2.088 |
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- | Avalanche | 1000V | 3A | 1.5V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 2µs | 5µA @ 1000V | - | Through Hole | SOD-64, Axial | SOD-64 | 140°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 400V 3A SOD64 |
7.002 |
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- | Avalanche | 400V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 400V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 3A SOD64 |
6.372 |
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- | Avalanche | 200V | 3A | 1.1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 200V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
7.434 |
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SUPERECTIFIER® | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 5A SMC |
7.974 |
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FRED Pt® | Standard | 600V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 43ns | 3µA @ 600V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 2A TO277A |
5.184 |
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Automotive, AEC-Q101, eSMP® | Standard | 100V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 21pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 2A TO277A |
8.298 |
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Automotive, AEC-Q101, eSMP® | Standard | 150V | 2A | 1.05V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | 21pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
8.388 |
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eSMP® | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.8A TO277 |
7.470 |
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eSMP® | Avalanche | 1000V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 1KV 1.8A TO277 |
7.488 |
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eSMP® | Avalanche | 1000V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 1000V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 1.8A TO277A |
5.202 |
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eSMP® | Avalanche | 800V | 1.8A (DC) | 1.9V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 120ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 800V 2.9A SOD64 |
3.636 |
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- | Avalanche | 800V | 2.9A | 1.78V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 800V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 600V 3A SOD64 |
3.402 |
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- | Avalanche | 600V | 3A | 1.4V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 5µA @ 600V | - | Through Hole | SOD-64, Axial | SOD-64 | -55°C ~ 175°C |