Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Einfach, vorgespannt

Serie

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Transistortyp

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Strom - Kollektor (Ic) (max.)

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Spannung - Kollektor-Emitter-Durchschlag (max.)

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Widerstand - Basis (R1)

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Widerstand - Emitterbasis (R2)

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Gleichstromverstärkung (hFE) (min) @ Ic, Vce

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Vce-Sättigung (Max) @ Ib, Ic

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Strom - Kollektorabschaltung (max.)

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Frequenz - Übergang

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Leistung - max

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Montagetyp

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Paket / Fall

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Lieferantengerätepaket

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KategorieHalbleiter / Transistoren / Transistoren - Bipolar (BJT) - Einfach, vorgespannt

HerstellerToshiba Semiconductor and Storage

Datensätze 227

Seite 4/8

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Transistortyp	Strom - Kollektor (Ic) (max.)	Spannung - Kollektor-Emitter-Durchschlag (max.)	Widerstand - Basis (R1)	Widerstand - Emitterbasis (R2)	Gleichstromverstärkung (hFE) (min) @ Ic, Vce	Vce-Sättigung (Max) @ Ib, Ic	Strom - Kollektorabschaltung (max.)	Frequenz - Übergang	Leistung - max	Montagetyp	Paket / Fall	Lieferantengerätepaket
RN1417,LF	Toshiba Semiconductor and Storage	NPN BRT Q1BSR10KOHM Q1BER4.7KOHM	3.526	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN1418,LF	Toshiba Semiconductor and Storage	NPN BRT Q1BSR47KOHM Q1BER10KOHM	5.868	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2303,LF	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR22KOHM Q	8.496	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2406,LF	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR4.7KOHM	7.596	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2411,LF	Toshiba Semiconductor and Storage	PNP BRT Q1BSR10KOHM Q1BERINFINIT	7.236	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2416,LF	Toshiba Semiconductor and Storage	PNP BRT Q1BSR4.7KOHM Q1BER10KOHM	5.886	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2418,LF	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BER10KOHM	5.328	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN1116,LF(CT	Toshiba Semiconductor and Storage	TRANSISTOR NPN BRT Q1BSR4.7KOHM	6.318	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2103,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR22KOHM Q1BER22KOHM	4.806	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2104,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BER47KOHM	3.598	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2105,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR2.2KOHM Q1BER47KOHM	6.228	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2106,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR4.7KOHM Q1BER47KOHM	8.910	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2108,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR22KOHM Q1BER47KOHM	2.304	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2109,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BER22KOHM	3.240	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2113,LF(CT	Toshiba Semiconductor and Storage	PNP BRT Q1BSR47KOHM Q1BERINFINIT	6.534	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2425(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR0.47KOHM	8.208	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN2426(TE85L,F)	Toshiba Semiconductor and Storage	TRANSISTOR PNP BRT Q1BSR1KOHM Q1	8.406	*	-	-	-	-	-	-	-	-	-	-	-	-	-
RN1101MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 50V SOT723	4.896	-	NPN - Pre-Biased	100mA	50V	4.7 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN1104MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W VESM	6.822	-	NPN - Pre-Biased	100mA	50V	47 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN1110MFV,L3F	Toshiba Semiconductor and Storage	TRANS PREBIAS NPN 0.15W VESM	2.358	-	NPN - Pre-Biased	100mA	50V	4.7 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1117MFV,L3F	Toshiba Semiconductor and Storage	TRANS NPN PREBIAS 50V 100MA VESM	7.146	-	NPN - Pre-Biased	100mA	50V	10 kOhms	4.7 kOhms	30 @ 10mA, 5V	300mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN1111MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM PLN (LF) TRANSISTO	8.154	-	NPN - Pre-Biased	100mA	50V	10 kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1113MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	7.002	-	NPN - Pre-Biased	100mA	50V	47 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1116MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	2.574	-	NPN - Pre-Biased	100mA	50V	4.7 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN1118MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	5.616	-	NPN - Pre-Biased	100mA	50V	47 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN1119MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	8.334	-	NPN - Pre-Biased	100mA	50V	1 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN1132MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	6.174	-	NPN - Pre-Biased	100mA	50V	200 kOhms	-	120 @ 1mA, 5V	300mV @ 500µA, 5mA	100nA (ICBO)	-	150mW	Surface Mount	SOT-723	VESM
RN2109MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	7.434	-	PNP - Pre-Biased	100mA	50V	47 kOhms	22 kOhms	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM
RN1114MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	4.374	-	NPN - Pre-Biased	100mA	50V	1 kOhms	10 kOhms	50 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-723	VESM
RN2108MFV,L3F	Toshiba Semiconductor and Storage	X34 PB-F VESM TRANSISTOR PD 150M	3.474	-	PNP - Pre-Biased	100mA	50V	22 kOhms	47 kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	-	150mW	Surface Mount	SOT-723	VESM

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Toshiba Semiconductor and Storage Transistoren - Bipolar (BJT) - Einfach, vorgespannt

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