Vishay's next generation D-series MOSFETs feature high performance metrics such as ultra-low on-resistance and ultra-low gate charge

     Vishay Intertechnology has announced the launch of the first component of its next-generation D-series high-voltage power MOSFETs. The new 400V, 500V, and 600V N-channel devices feature low on-resistance, ultra-low gate charge, and 3A to 36A currents in a variety of packages.

     The D-Series MOSFETs are based on a new high-voltage strip technology that enables new levels of efficiency and power density. The device's strip design, combined with a smaller strip size and termination, results in a 50% lower gate charge than previous generation solutions, while increasing switching speed and reducing on-resistance and input capacitance.

     The on-resistance of 400V, 500V, and 600V devices is 0.17Ω, 0.13Ω, and 0.34Ω, respectively. Ultra-low on-resistance means extremely low conduction and switching losses, enabling energy savings in high-power, high-performance switching power applications for server and communication power systems, welding, plasma cutting, battery chargers, fluorescent lamps, high-intensity discharge (HID) lighting, semiconductor devices, and electromagnetic heating.

     The 400V, 500V, and 600V devices in the D series MOSFETs have gate charges of 9nC, 6nC, and 45nC, respectively, with the best gate charge and on-resistance product, which is the key optimization factor (FOM) for MOSFETs used in power conversion applications. The FOM for 400V, 500V, and 600V devices is 7.65Ω-nC, 15.6Ω-nC, and 12.3Ω-nC, respectively.

     The new D-Series MOSFETs feature simple gate drive circuits and very durable body diodes that are easy to design into more compact, lighter, and less heated end products. The device is RoHS compliant, halogen-free according to IEC 61249-2-21, and avalanche (UIS) grading allows the device to operate reliably.