Transphorm has released the industry's first simulation model for the 1200 volt GaN-on-Sapphire device

     Transphorm, a pioneer and global supplier of reliable, high-performance gallium nitride (GaN) power conversion products, has announced the launch of its 1200 volt power tube simulation model and initial specifications. The TP120H070WS power tube is the only 1200 volt GaN-on-Sapphire power semiconductor launched to date, leading the pack.

     The launch demonstrates Transphorm's ability to support future automotive power systems, as well as three-phase power systems that are already widely used in the industrial, data communications and renewable energy markets. These applications can benefit from higher power density and greater reliability, equivalent or superior performance, and more reasonable cost of 1200 volt gallium nitride devices compared to alternative technologies.

     Transphorm has recently demonstrated higher performance of gallium nitride devices in 5kW 900-volt step-down converters at 100kHz switching frequencies. The 1200 volt gallium nitride device achieved an efficiency of 98.7%, exceeding that of mass-produced SiC MosFeTs with similar ratings.

     The innovative 1200-volt technology also demonstrates Transphorm's leadership in gallium nitride power conversion. A vertically integrated model, proprietary epitaxial wafer production capacity, and proprietary process technology, combined with decades of engineering expertise, have enabled the company to bring to market a portfolio of gallium nitride devices with the highest performance and significant differentiation in four areas: manufacturability, ease of drive, ease of design, and reliability.

     The electric vehicle industry, especially in the higher kilowatt nodes of larger vehicles, will move toward 800-volt batteries in the second half of this decade. Therefore, 1200 volt power transfer switches will be used to provide the required level of performance. As a result, Transphorm's 1200-volt platform is a great fit for the next generation of on-board chargers, DC-DC converters, drive inverters and charging pile systems.

     Transphorm offers a 650 volt normally switched SuperGaN power tube solution for current electric vehicles using 400 volt batteries. These power devices are AEC-Q101 compliant and can withstand temperatures up to 175°C and have been mass-produced.

     "We are the leading power semiconductor company demonstrating and delivering on GaN's promise," said Umesh Mishra, chief Technology officer and co-founder of Transphorm. Transphorm's expertise brings to market superior gallium nitride devices that set new standards in power density, performance and system cost every moment. Our 1200-volt technology is testament to the innovative vision and determination of the Transphorm engineering team. We are demonstrating that gallium nitride can easily play a role in the previously designated silicon carbide application markets. This opens up the potential for a wide range of market applications for our business and gallium nitride technology."