ST introduces the new SCT20N120 Silicon Carbide power MOSFET transistor

     ST introduces the new SCT20N120 silicon Carbide power MOSFET transistor, whose advanced energy efficiency and superior reliability will bring technological advantages to more energy-efficient applications, including inverters for pure electric and hybrid vehicles, solar or wind power generation, energy-efficient drives, power supplies and smart grid devices.

     STMicroelectronics is one of the industry's few leaders in the development of highly reliable and energy-efficient silicon carbide power semiconductors, and is always committed to the development and upgrading of technology. The introduction of the 1200VSCT20N120 further expands the silicon carbide MOSFET product family, with a less than 290mΩ on-state resistance (RDS(ON)) and a maximum working junction temperature of up to 200°C. Its highly stable off/off energy (Eoff) and gate charge (Qg) enable consistent switching performance over the entire operating temperature range. The resulting low on-off and on-off losses, combined with ultra-low leakage currents, will help simplify thermal management designs and maximize reliability.

     In addition to lower power losses, ST's silicon carbide MOSFETs also have an excellent switching frequency, three times higher than comparable silicon insulated gate bipolar transistors (IGBTs), allowing designers to use smaller external components, thereby reducing product size, weight, and material costs. The high temperature resistance of the SCT20N120 greatly simplifies the design of cooling systems for applications such as power modules and electric vehicles.

     The SCT20N120 is packaged in ST's exclusive HiP247™ package, whose higher thermal efficiency enables the tube TO maintain its TO-247 industry-standard power package appearance at maximum operating temperatures up to 200°C.