ST introduces the latest 1200V silicon carbide diode, which offers excellent energy efficiency and advanced robustness

     The STMicroelectronics 2A-40A 1200V Silicon Carbide (SiC) JBS (Junction Barrier Schottky) diode portfolio allows more application equipment products to benefit from the high switching energy efficiency, fast recovery and stable temperature characteristics of silicon carbide technology. St's silicon carbide process can produce extremely robust diodes with best-in-class forward voltage (lowest VF), giving circuit designers more room to play, high energy efficiency and high reliability with low cost low current diodes, and making it easier for silicon carbide technology to open cost-sensitive applications. Examples include solar inverters, industrial motor drives, home appliances, and power adapters.

     At the same time, the latest 1200V silicon carbide diodes from STMicroelectronics meet the requirements of high energy efficiency, low weight, small size or the best heat dissipation for high performance applications. Lower forward voltage drop (VF) results in higher energy efficiency, which is a major benefit for many automotive devices, such as on-board chargers (OBCs) and plug-in hybrid or pure electric vehicle (PHEV/EV) charging stations. On the other hand, the generally robust electrical performance ensures that it is best suited for carrier-grade power supplies, server power supplies, high-power industrial switching power supplies (SMPS) and motor drivers, uninterruptible power supplies (UPS) and large solar inverters.

     In addition to maximizing the energy efficiency of silicon carbide, the lowest forward voltage drop VF also helps to reduce the operating temperature and extend the life cycle of the application equipment. In addition, ST's process ensures that the product has a very small VF (forward voltage specified in the data book) differential pressure, which ensures good reproducibility of the circuit when negotiating the production circuit in original equipment manufacturing.

     STMicroelectronics' new range of 1200V silicon carbide diodes covers the 2A TO 40A rated current range and includes DPAK HV(high voltage) and D²PAK mount automotive grade components or through-hole TO-220AC and TO-247LL (long-pin) packages. St is the only company on the market that offers 1200V silicon carbide diodes in D²PAK packages. 10A STPSC10H12D diode in TO-220AC package.