Renesas Electronics introduces eight low-power MOSFETs
Renesas Electronics Corporation announced the launch of eight low-power P-channel and N-channel power metal oxide semiconductor field-effect transistor (MOSFET) products, ideal for use in portable electronics including smartphones and notebooks. Featuring industry-leading low power consumption (low on-resistance), the new devices include 20 V (VDSS) µPA2600 and 30 V µPA2601 in an ultra-compact 2 mm × 2 mm package for improved power efficiency and miniaturization of small mobile device package sizes.
With the popularity of feature-rich smartphones and increased user expectations for a seamless experience with these devices, there is now a growing demand for smaller, thinner package sizes with lower power consumption and longer battery life between charges. To meet these needs, designers are turning to power MOSFETs with lower on-resistance for charge/discharge control, RF power amplifier on/off control, and overcurrent cutoff switches, while also supporting high currents.
The new µPA2600 and µPA2601 MOSFETs meet these requirements, providing further miniaturization and industry-leading low on-resistance in portable devices while reducing the installation area in a wide range of applications. These applications include load switches in portable devices (which turn the IC applied on or off) and charge/discharge control, as well as overcurrent cut-off switches in RF power amplifiers (amplifiers for high frequency signals).
A variety of devices with different voltages and polarities, such as power MOSFETs, are required to match the power supply specifications in portable devices, including headphones. To meet these requirements, Renesas has worked to reduce on-resistance and create smaller packages that offer a rich array of these products.
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