Qorvo's new GaN 50V transistor significantly improves system power performance

     Qorvo, a leading provider of RF solutions for mobile, infrastructure and aerospace and defense applications, announced the launch of six new 50V gallium nitride (GaN) transistors - the QPD1009 and QPD1010, as well as the QPD1008(L) and QPD1015(L). Specifically designed to optimize power performance for commercial radar, communications systems and avionics applications.

     Roger Hall, General Manager of Qorvo Defense & Aerospace Products, said: "The new 50V GaN transistor family enhances system performance by providing higher power gain and power added efficiency. "Qorvo can better meet the requirements of advanced equipment such as phase array radars, providing higher performance while managing size, cost and power."

     Qorvo's new 50V GaN transistor family offers significant savings in operating and system costs through improved system-level efficiency. The series features small size and high impedance input/output leads that help optimize circuit board design for radar, communications, avionics, broadband amplifiers, and test meters.

     The QPD1009 and QPD1010 are now available in a low-cost 3x3mm QFN plastic package, while the QPD1008(L) and QPD1015(L) are now available in the industry standard thermal performance enhanced NI-360 aircavity ceramic package, in earless and earless versions. The GaN transistor family operates at power levels of 10W to 125W.

     Qorvo is a leading global supplier of GaN RF. Since 1999, Qorvo has been driving GaN research and innovation, providing proven GaN circuit reliability and compact, high-efficiency products. Qorvo completed the GaN on SiC program in 2014. The company is also the only GaN supplier to achieve Manufacturing Maturity (MRL) level 9. Qorvo has been driving next generation system innovation for GaN products - from DC to Ka bands - with reliable performance, low cost maintenance, and long operating life to successfully transition from factory to field.