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Qorvo introduces a range of gallium nitride (GaN)/Gallium arsenide (GaAs) hybrid power amplifiers

Aug 30 2015 2015-08 Power Qorvo US Inc.
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Qorvo, a leading provider of RF solutions for mobile, infrastructure, and aerospace and defense applications, announced the introduction of a hybrid line of gallium nitride (GaN)/ Gallium arsenide (GaAs) power amplifiers to expand range and meet the exploding data throughput requirements of the point-to-point radio link market.

     Qorvo, a leading provider of RF solutions for mobile, infrastructure, and aerospace and defense applications, announced the introduction of a hybrid line of gallium nitride (GaN)/ Gallium arsenide (GaAs) power amplifiers to expand range and meet the exploding data throughput requirements of the point-to-point radio link market.

     Gorden Gook, general manager of Qorvo's Transmission Business unit, said: "Wireless infrastructure customers are increasingly demanding higher power amplifiers to increase data throughput rates and support longer distance point-to-point connections. Qorvo's new GaN/GaAs hybrid power amplifier portfolio leverages our 30 years of leading experience in advanced GaAs and GaN process technologies and will certainly contribute to the growth of the commercial wireless infrastructure market."

     The TGA2752-SM, TGA2753-SM and TGA2760-SM series combine the benefits of both GaN and GaAs technologies, providing up to 16 W of output power to meet the emerging needs of the peer-to-peer market.

     The frequency range is as follows: TGA2752-SM operates in the range of 7.1-8.5 GHz; TGA2753-SM operates in the range of 5.9-7.7 GHz; The TGA2760-SM operates in the 9.5-12 GHz range. The TGA2752-SM and TGA2753-SM products feature a unique package design and offer a low-cost 7x9mm² QFN surface mount package for point-to-point radio and C-band linear satellite communications. The higher frequency TGA2760-SM is available in an 8x10mm² package.

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