Power Integration Corporation announces gate drivers for SiC and IGBT modules with enhanced protection

     Power Integrations unveiled a new series of plug-and-play gate drivers for 62 mm silicon-carbide (SiC) MOSFET and silicon IGBT modules rated up to 1,700 V, with additional protective features to assure safe, reliable operation. The dual-channel gate drivers, SCALE-2 2SP0230T2x0, incorporate short-circuit protection that activates in under two microseconds. This feature safeguards the compact SiC MOSFETs from harmful over-currents. The updated drivers feature advanced active clamping (AAC) technology, which safeguards the switches against over-voltage when turning off, allowing for higher operating voltages in the DC link.

     Power Integrations states that the 2SP0230T2x0 gate drivers offer high flexibility as they may be used to operate both SiC MOSFET and IGBT modules using the same hardware. This strategy mitigates both the complexities associated with system design and sourcing, while also expediting the development process through its plug-and-play nature.

     The 2SP0230T2x0 gate drivers are well-suited for various applications, including railway auxiliary converters, offboard EV chargers, and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid. These gate drivers are built on Power Integrations’ established SCALE-2 technology, which offers several advantages such as increased integration, reduced size, additional functionality, and improved system reliability. The 2SP0230T2x0 from Power Integrations is a small module measuring 134 x 62 mm that offers enhanced isolation at a voltage of 1,700 V. This allows it to be used for operations up to 1,700 V, which is 500 V more than traditional drivers that are usually restricted to 1,200 V.