ON Semiconductor's EliteSiC silicon carbide family of solutions delivers industry-leading energy efficiency

     ON announced the naming of its silicon Carbide (SiC) line as "EliteSiC". At this week's Consumer Electronics Show (CES) in Las Vegas, the company will showcase three new EliteSiC models: a 1700 V EliteSiC MOSFET and two 1700 V Avalanche EliteSiC Schottky diodes. These new devices provide reliable, energy-efficient performance for energy infrastructure and industrial drive applications, and underscore Anson Mae's position as a leader in industrial silicon carbide solutions.

     ON Semiconductor's 1700 V EliteSiC MOSFET (NTH4L028N170M1) provides SiC solutions with the higher breakdown voltage (BV) required for high power industrial applications. Two 1700 V Avalanche EliteSiC Schottky diodes (NDSH25170A, NDSH10170A) allow designers to achieve stable operation at high temperatures and pressures while enabling high energy efficiency from SiC.

     Simon Keeton, Executive Vice President and General Manager, Power Solutions, ON Semiconductor, said: "The new 1700 V EliteSiC devices provide outstanding energy efficiency and lower power consumption, strengthening our high standards of performance and quality in our EliteSiC family, while further expanding the depth and breadth of our EliteSiC offerings. Combined with our end-to-end SiC manufacturing capabilities, Ansamey offers technology and supply guarantees that meet the needs of industrial energy infrastructure and industrial drive providers."

     Renewable energy applications are moving towards higher voltages, with solar systems moving from 1100 V to 1500 V DC busbars. To support this change, customers require MosFeTs with higher breakdown voltage (BV) values. The new 1700 V EliteSiC mosFETs have a maximum Vgs range of -15 V/25 V and are suitable for fast switching applications where the gate voltage is increased to -10 V, providing higher system reliability.

     Under test conditions of 1200 V and 40 A, the grid charge (Qg) of 1700 V EliteSiC MOSFET reached a market-leading 200 nC, while the Qg of similar competitive devices was nearly 300 nC. Low QGS are critical to achieving high energy efficiency in fast-switching, high-power renewable energy applications.

At a rated breakdown voltage (BV) of 1700 V, the EliteSiC Schottky diode device provides a better margin between the maximum reverse voltage (VRRM) and the peak repeat reverse voltage of the diode. The new device also has excellent reverse leakage current performance, with a maximum reverse current (IR) of only 40 µA at 25°C and 100 µA at 175°C -- significantly better than competing devices that typically have ratings of 100 µA at 25°C.