NXP introduces MOSFETs with solderable tinned side pads

     NXP Semiconductor introduces the industry's first 2 mm x 2 mm ultra-thin DFN (discrete flat pin free) package MOSFETs with solderable tinned side pads. These unique side pads offer the advantage of optical welding inspection and better quality of welded connections compared to traditional pin-free packages.

     The upcoming new PMPB11EN and PMPB20EN 30V N-channel MOSFETs are the first of more than 20 devices in NXP's DFN2020MD-6 (SOT1220) package. The maximum drain current (ID) of these two MOSFETs is greater than 10A, and the ultra-low on-resistance Rds(on) at 10V is 12 mOhm (typical value) and 16.5 mOhm (typical value), respectively, so the on-loss is small, the power consumption is lower, and the battery life is longer

     With a height of just 0.6 mm, the new DFN2020 MOSFET is thinner and lighter than most 2 mm x 2 mm products on the market today, making it ideal for ultra-small load switches, power converters and charge switches in portable applications such as smartphones and tablets. The MOSFETs are also suitable for other space-constrained applications, including DC motors, server and network communications, and LED lighting, where power density and efficiency are critical. The package size of the DFN2020 is one-eighth that of the standard SO8 package, offering comparable thermal resistance and replacing many large MOSFET packages with the same on-resistance Rds(on) value range, such as SO8, 3 mm x 3 mm, or TSSOP8 packages.

     The new MOSFETs enhance NXP's ultra-small pin-free MOSFETs product line, which will be available in more than 60 packages by the end of the year in sizes of 2 mm x 2 mm or 1 mm x 0.6 mm. Today, NXP is a leading producer of ultra-small, low-on-resistance Rds(on) MOSFETs, providing level field effect transistor (FET) and bipolar transistor technologies.