LPDDR4X dram provides increased power efficiency and performance

     Alliance Memory has announced the expansion of its high-speed CMOS mobile low-power sdram into a new 16Gb and 32Gb LPDDR4X device that combines low-power ratings with improved clock speed and data rates in a 200-ball FBGA package.

     The company's LPDDR4X sdram provides a reliable plug-in, pin-to-pin compatible alternative to many similar solutions in high-bandwidth, high-performance storage system applications, eliminating the need for costly redesigns and part re-certification.

     The low voltage operating voltage of the 16Gb AS4C512M32MD4V-046BIN and 32Gb AS4C1G32MD4V-046BIN is 0.6V, providing increased power efficiency and extended battery life for portable electronics in consumer, commercial and industrial markets. This includes smartphones, smart speakers, security monitoring systems, and other iot devices that use AI and 5G technology.

     LPDDR4X sdram provides increased efficiency for advanced audio and ultra-high resolution video in embedded applications. They offer a high clock rate of 2.133GHz for extremely high data rates of 4.2Gbps. Offering a 32-bit bus width, the device operates in the industrial temperature range from -40 ° C to +95 ° C.

     These devices are organized into two channels for each device, each channel consisting of eight sets of 16 bits. These components offer fully synchronous operation, programmable read/write burst lengths of 16, 32 and dynamic, and configurable drive strength. The on-chip temperature sensor controls the self-refresh rate.