Infineon introduces the sixth generation 650 V CoolSiC Schottky diode

Okt 6 2017 2017-10 Passive Components Infineon Technologies

Infineon Technologies AG introduces the sixth generation 650 V CoolSiCTM Schottky diode, the latest addition to the CoolSiC diode product family. It builds on the distinctive characteristics of fifth-generation products to ensure reliability, quality and efficiency. The CoolSiC G6 diode is the perfect complement to the 600 V and 650 V CoolMOSTM 7 product family. They target current and future server and PC power supplies, telecom equipment power supplies, and photovoltaic inverter applications.

The sixth-generation 650 V CoolSiC Schottky diode has a new layout and a new proprietary SchoTT system, and the internal structure is completely different from the previous generation. The result is an industry benchmark VF (1.25V) and a Qcx VF Quality factor (FOM) that is 17% lower than the previous generation. In addition, the newly launched sixth-generation all-new diode takes full advantage of the powerful properties of silicon carbide - temperature-independent switching performance and no reverse recovery charge.

The device is designed to help increase efficiency under all load conditions while increasing system power density. Therefore, the sixth generation 650 V CoolSiC Schottky II electrode is available benefits include reduced heat dissipation requirements, improved system reliability and extremely fast switching speeds. The new device is a new-generation silicon carbide diode product with the best cost performance.

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