Infineon introduces the new CoolSiCTM 1200V SiC JFET family

     Infineon Technologies AG introduces the new CoolSiCTM 1200V SiC JFET series, which strengthens Infineon's leading position in the SiC (silicon carbide) product market. This revolutionary new product family builds on more than a decade of experience in SiC technology development and high-quality, high-volume production.

     Jan-Willem Reynaerts, Head of High Voltage Power Conversion Products at Infineon Technologies AG, said: "Infineon has introduced a number of breakthrough technologies for markets that require efficient power management. CoolSiCTM is also a revolutionary and innovative technology that takes the performance of solar inverters to new levels. With the new SiC JFET technology, we can help our customers develop better climate protection solutions."

     Compared to IGBTs, the new CoolSiCTM 1200V SiC JFET significantly reduces switching losses and can support higher switching frequencies without sacrificing overall system efficiency. This creates the conditions for the use of smaller passive components, the result of which is to reduce the size of customer-designed products, reduce their weight, and compress system costs. In other words, designers can achieve higher output power without increasing the size of the solar inverter.

     To ensure the safety and ease of use of the generic JFET technology, Infineon has developed a concept known as direct drive technology. In this concept, the JFET is combined with an external low-voltage MOSFETs and a dedicated driver chip to ensure safe system startup, as well as fast and controllable switching.

     The CoolSiCTM JFET integrates a single diode with switching performance comparable to an external SiC Schottky barrier diode. This combination maximizes the efficiency, reliability, safety and ease of use of the device.