Infineon introduces a new CoolSiC portfolio in 62 mm packages to help achieve greater efficiency and power density

     Infineon Technologies AG has announced the addition of a new industry-standard package to its CoolSiC 1200 V and 2000 V MOSFET module family. It uses a proven 62 mm device half-bridge topology design and is based on the newly introduced enhanced M1H silicon carbide (SiC) MOSFET technology. The package enables SiC to be used in mid-power class applications above 250 kW, where conventional IGBT silicon technology has reached its limit of power density. Compared with the traditional 62mm IGBT module, its application range has now expanded to solar energy, servers, energy storage, electric vehicle charging piles, traction, commercial induction induction stoves and power conversion systems.

     The enhanced M1H technology significantly broadens the gate voltage window without any restrictions, even at high switching frequencies, ensuring high grid reliability against induced voltage spikes caused by drivers and layouts. In addition, extremely low switching and transmission losses minimize cooling requirements. Combined with high reverse voltages, these semiconductor devices also meet another requirement of modern system design. With Infineon's CoolSiCTM chip technology, the converter design can be made more efficient and the power rating of individual inverters can be further increased, thereby reducing the overall system cost.

     Equipped with copper substrates and threaded interfaces, the package features a highly robust mechanical design that improves system availability, reduces service costs and reduces downtime losses. Excellent reliability is achieved through strong thermal cycling capacity and a continuous operating junction temperature of 150°C (Tvjop). Its symmetrical internal package design enables the same switching conditions for the upper and lower switches. Pre-coated thermal interface material (TIM) is optional to further improve the thermal performance of the module.