IDT extends RF voltage variable attenuator range to 6GHz with a 1000x linear improvement

      IDT has added two new members to its growing family of silicon-based RF voltage Variable attenuators (VVA) - which provide the analog control needed for precise attenuation applications - expanding the company's frequency coverage from 1MHz to 6GHz. Both devices have a bi-directional RF port, support a 3V or 5V single positive supply voltage, and have an operating temperature range of -40°C to 105°C.

     Just like the rest of the family, the F2255 and F2258 devices offer what claim to be industry leading low insertion loss and high linearity. Coming soon in a compact 3mm x 3mm, 16-pin TQFN package, the new device offers a competitive solution with approximately half the insertion loss, IP3 (third-order interception point) linear performance of 1000X (30 dB), better than competing gallium arsenide (GaAs) devices, to calculate, And shows both ends of the voltage control range linear to dB attenuation characteristics. Their low insertion loss reduces the path loss of the RF chain, while their high linearity improves the data transfer rate of the system.

     These new devices match popular footprints and are suitable for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communications/data equipment, test/ATE equipment, military systems, JTRS radios and HF, VHF and UHF radios.

     "IDT's silicon-based RF products offer superior performance compared to gallium arsenide solutions, in this case up to 30dB of linear improvement," said Chris Stephens, general manager of IDT's RF business unit. "These devices are the lowest insertion loss VVAs on the market and have the most linear attenuation control characteristics."

     IDT claims that by using silicon-based RF semiconductor technology, its attenuators offer a powerful alternative to older GaAS-based technologies. Silicon provides stronger electrostatic discharge (ESD) protection, better moisture sensitivity rating (MSL), improved thermal performance, lower power consumption and proven reliability, the company added.

     Comparing the F2258 to pin compatible GaAs competitors, the device has an input IP3 of up to 65dBm versus 35dBm, 33 dB/V versus 53 dB/V, minimum return loss of up to 12.5 dB versus 7 dB with a maximum attenuation slope of 6000MHz. And the maximum operating temperature range of 105℃ and 85℃. The F2255 supports a frequency range down to 1MHz and has a maximum attenuation slope of 33 dB/V.