High voltage floating electrode MLCC capacitor
KEMET floating electrode high voltage capacitors with standard (FE-CAP) or flexible terminals (FF-CAP) combine two existing KEMET technologies: floating electrode and flexible terminal. The floating electrode assembly uses a cascade/series electrode design configured to form multiple series capacitors within a single monolithic structure.
This unique configuration results in higher voltage and ESD performance than standard capacitor designs, while allowing for fault open circuit conditions in case of mechanical damage (rupture). The capacitance variation at ambient temperatures from -55°C to +125°C is limited to ±15% (X7R) and ±30 ppm/°C (C0G).
Whether under the hood or in the cabin, these capacitors are designed to provide reliable performance for mission - and safety-critical vehicle circuits. In response to potentially harsh environmental conditions, more stringent testing protocols and inspection standards have been developed for automotive grade products. KEMET's automotive grade series capacitors meet the stringent AEC-Q200 certification requirements of the Automotive Electronics Committee
Features
● Floating electrode/fault open circuit design
● Passed AEC-Q200 automotive class certification
● Available dielectric: X7R and C0G
● Operating temperature range: -55°C to +125°C
● Excellent flexibility: up to 5 mm flexible end
● DC voltage ratings: 500 V, 630 V, 1 kV, 1.5 kV, 2 kV, 2.5 kV and 3 kV
● EIA: 0805, 1206, 1210, 1808, 1812, 1825, 2220 and 2225
● Industry-leading CV value (X7R)
● Excellent high frequency performance (X7R)
● Very Low ESR and ESL (C0G)
● High ripple current capability (C0G)
● 100% pure mist tin plating terminal surface treatment, with excellent weldability
● Lead-free (Pb), in line with RoHS and REACH specifications
Applications
● X7R
- EV/HEV (Drive system, charging)
- LCD fluorescent backlight ballast
- Power converter
- LAN/WAN interface
● C0G
- EV/HEV (Drive system, charging)
- High-frequency power converter
- Wide-band gap (WBG), silicon carbide (SiC) and gallium nitride (GaN) systems
- Absorption circuit (high dv/dt)
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