EPC introduces new eGaN FETs for augmented reality and fully autonomous vehicle applications with extremely high resolution

     EPC announced the introduction of the EPC2040 power transistor, an ultra-small, fast-switching gallium nitride power transistor for high-speed end applications that enables superior resolution, faster response times and higher accuracy. In addition, since the device has a high accuracy threshold over the entire operating temperature range, the stability of the system is ensured when the laser is heated. For example, the pulsed laser driver used in the LiDAR technology is an ideal device. LiDAR technology is an important technology for the navigation system and augmented reality platform of fully autonomous vehicles. The superior performance of EPC2040 enables higher accuracy and resolution in these systems.

     The grid threshold of the EPC2040 eGaN FET has a low temperature coefficient to improve the performance of the end system. The stability of this device enables lower laser diode power and smooth system operation over the entire operating temperature range.

     Advantages of using gallium nitride FET in an AR system include lower heat of the laser diode due to shorter pulse width, high efficiency due to low heat of the laser diode driver, smaller system size due to the small eGaN FETs, and smooth operation of the EPC2040 for stable operation over the entire operating temperature range.

     "The EPC2040 is designed for applications that require high frequency and short pulse capabilities," said Steve Colino, EPC's vice president of strategic technology sales. "These requirements are critical to improving the resolution of LiDAR technology, a key technology in collision avoidance systems and navigation systems for fully autonomous vehicles."