Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 98/180
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Hersteller |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 12A DO201AD |
6.120 |
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- | Schottky | 60V | 12A | 700mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 120µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | 200°C (Max) |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 8A TO220AC |
6.084 |
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- | Standard | 50V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 8A TO220AC |
8.406 |
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- | Standard | 100V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A TO220AC |
2.016 |
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- | Standard | 200V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 8A TO220AC |
6.426 |
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- | Standard | 300V | 8A | 1V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
4.788 |
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- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AC |
6.804 |
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- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 600V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 8A TO220AC |
3.312 |
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- | Standard | 800V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 10µA @ 800V | 55pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 35V 16A TO220AC |
3.258 |
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- | Schottky | 35V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 35V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 16A TO220AC |
2.304 |
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- | Schottky | 45V | 16A | 630mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 45V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 16A TO220AC |
4.914 |
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- | Schottky | 50V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 16A TO220AC |
6.012 |
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- | Schottky | 60V | 16A | 750mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 16A TO220AC |
3.366 |
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- | Schottky | 90V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 90V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 10A TO220AC |
6.534 |
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- | Schottky | 100V | 10A | 850mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 15A SMPC4.0 |
2.178 |
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- | Schottky | 100V | 15A | 700mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 100V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
2.268 |
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Automotive, AEC-Q101 | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 12A DO201AD |
3.472 |
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Automotive, AEC-Q101 | Schottky | 40V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 12A DO201AD |
3.508 |
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Automotive, AEC-Q101 | Schottky | 20V | 12A | 550mV @ 12A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AC |
7.992 |
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- | Standard | 600V | 10A | 2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 10A ITO220AC |
5.814 |
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- | Standard | 200V | 10A | 975mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 170pF @ 4V, 1MHz | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 16A TO220AC |
8.460 |
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- | Schottky | 100V | 16A | 850mV @ 16A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 100V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 10A ITO220AB |
8.946 |
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- | Standard | 600V | 10A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A ITO220AC |
8.550 |
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- | Standard | 600V | 8A | 2.9V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 30µA @ 600V | - | Through Hole | TO-220-2 Full Pack | ITO-220AC | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 8A TO220AC |
7.272 |
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- | Standard | 200V | 8A | 975mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 8A TO220AC |
3.816 |
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- | Standard | 400V | 8A | 1.3V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 80V 20A SMPC4.0 |
4.464 |
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- | Schottky | 80V | 20A | 640mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 80V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 8A TO220AB |
3.006 |
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- | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A TO220AC |
8.064 |
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- | Schottky | 150V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 120V 15A TO220AB |
3.096 |
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- | Schottky | 120V | 15A | 880mV @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 120V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 45V 10A SMPC4.0 |
8.622 |
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- | Schottky | 45V | 10A | 460mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 300µA @ 45V | - | Surface Mount | TO-277, 3-PowerDFN | SMPC4.0 | -55°C ~ 150°C |