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Taiwan Semiconductor Corporation Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 90/180
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
6A60GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A R-6
3.780
Automotive, AEC-Q101
Standard
600V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 600V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A80GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 6A R-6
5.472
Automotive, AEC-Q101
Standard
800V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
6A40GHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A R-6
2.052
Automotive, AEC-Q101
Standard
400V
6A
1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
TSPB5H100S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 5A SMPC4.0
6.606
-
Schottky
100V
5A
660mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 100V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB5H120S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 120V 5A SMPC4.0
3.852
-
Schottky
120V
5A
740mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 120V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
TSPB5H150S S2G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A SMPC4.0
3.528
-
Schottky
150V
5A
840mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
TO-277, 3-PowerDFN
SMPC4.0
-55°C ~ 150°C
SF43G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 4A DO201AD
3.042
-
Standard
150V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 150V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF44G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
4.554
-
Standard
200V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF38GHA0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
8.424
Automotive, AEC-Q101
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SS39 R7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 3A DO214AB
7.866
-
Schottky
90V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS39HR7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 3A DO214AB
7.722
Automotive, AEC-Q101
Schottky
90V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK515B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A DO214AA
4.626
-
Schottky
150V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SF45G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 4A DO201AD
5.994
-
Standard
300V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF46G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
7.992
-
Standard
400V
4A
1.3V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK59BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 5A DO214AA
2.484
Automotive, AEC-Q101
Schottky
90V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK510C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 100V DO-214AB
6.048
-
Schottky
100V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 100V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK515C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 150V DO-214AB
8.532
-
Schottky
150V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 150V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK520C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 200V DO-214AB
7.776
-
Schottky
200V
5A
950mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK59C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 90V DO-214AB
5.778
-
Schottky
90V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 90V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SSL32 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 20V DO-214AB
2.430
-
Schottky
20V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
SSL33 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 30V DO-214AB
3.294
-
Schottky
30V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
SSL34 V7G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 3A 40V DO-214AB
7.758
-
Schottky
40V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 125°C
SF41GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 4A DO201AD
3.618
Automotive, AEC-Q101
Standard
50V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF42GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 4A DO201AD
2.772
Automotive, AEC-Q101
Standard
100V
4A
1V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
100pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR802 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 8A DO201AD
6.426
-
Schottky
20V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR803 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 8A DO201AD
2.106
-
Schottky
30V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SR804 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 8A DO201AD
3.276
-
Schottky
40V
8A
550mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SF47G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 4A DO201AD
5.292
-
Standard
500V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 500V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF48G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
2.034
-
Standard
600V
4A
1.7V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 600V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SK510BHR5G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 100V 5A DO214AA
4.050
Automotive, AEC-Q101
Schottky
100V
5A
850mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C