Taiwan Semiconductor Corporation Gleichrichter - Single
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Loading...
Filter anzeigen
Filter zurücksetzen
Filter anwenden
KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 64/180
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 2A DO204AC |
4.734 |
|
- | Standard | 800V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 800V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 2A DO204AC |
8.586 |
|
- | Standard | - | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 1000V | 20pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SUB SMA |
3.330 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO214AA |
3.672 |
|
- | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO214AA |
4.896 |
|
Automotive, AEC-Q101 | Schottky | 20V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A DO214AA |
3.204 |
|
- | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A DO214AA |
2.988 |
|
Automotive, AEC-Q101 | Schottky | 30V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A DO214AA |
2.502 |
|
- | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A DO214AA |
3.960 |
|
Automotive, AEC-Q101 | Schottky | 40V | 1A | 500mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A DO214AA |
3.078 |
|
- | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 1A DO214AA |
3.852 |
|
Automotive, AEC-Q101 | Schottky | 50V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A DO214AA |
7.596 |
|
- | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A DO214AA |
4.734 |
|
Automotive, AEC-Q101 | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
8.622 |
|
- | Standard | 200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 1A DO214AC |
3.598 |
|
Automotive, AEC-Q101 | Standard | 200V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO201AD |
5.400 |
|
- | Standard | 50V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO201AD |
3.636 |
|
- | Standard | 100V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD |
8.226 |
|
- | Standard | 200V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 3A DO201AD |
6.534 |
|
- | Standard | 400V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A SUB SMA |
6.876 |
|
- | Schottky | 150V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 2A SUB SMA |
3.492 |
|
Automotive, AEC-Q101 | Schottky | 100V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 2A SUB SMA |
7.686 |
|
Automotive, AEC-Q101 | Schottky | 150V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 2A SUB SMA |
4.464 |
|
Automotive, AEC-Q101 | Schottky | 90V | 2A | 850mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 500V 2A DO214AC |
3.870 |
|
- | Standard | 500V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 500V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 2A DO214AC |
3.114 |
|
- | Standard | 600V | 2A | 1.7V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | 20pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 1A DO214AC |
4.032 |
|
- | Schottky | 20V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 20V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 1A DO214AC |
3.600 |
|
- | Schottky | 30V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A DO214AC |
8.334 |
|
- | Schottky | 40V | 1A | 390mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A TS-1 |
7.146 |
|
Automotive, AEC-Q101 | Schottky | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SUB SMA |
6.264 |
|
Automotive, AEC-Q101 | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 600V | 8pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |