Taiwan Semiconductor Corporation Gleichrichter - Single

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Spannung - Vorwärts (Vf) (Max) @ If

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 36/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
2A05G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	8.892	-	Standard	600V	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1MLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	6.714	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1MLHRUG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A SUB SMA	5.220	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 1000V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
1N5399GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1.5A DO204AC	3.510	Automotive, AEC-Q101	Standard	-	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
RS1K M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	8.118	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1KHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AC	7.668	Automotive, AEC-Q101	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1M M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	2.250	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
RS1MHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO214AC	3.888	Automotive, AEC-Q101	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2AA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1.5A DO214AC	8.082	-	Standard	50V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2BA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1.5A DO214AC	5.796	-	Standard	100V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 100V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2DA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1.5A DO214AC	2.142	-	Standard	200V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 200V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2GA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1.5A DO214AC	8.964	-	Standard	400V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 400V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
S2JA M2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1.5A DO214AC	6.768	-	Standard	600V	1.5A	1.1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 600V	30pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS12 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	5.886	-	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS12HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO214AC	4.824	Automotive, AEC-Q101	Schottky	20V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS13 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	3.472	-	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS13HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO214AC	7.524	Automotive, AEC-Q101	Schottky	30V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 30V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS14 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	3.510	-	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS14HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 1A DO214AC	4.230	Automotive, AEC-Q101	Schottky	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SS15 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	7.470	-	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS15HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 50V 1A DO214AC	2.100	Automotive, AEC-Q101	Schottky	50V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 50V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS16 M2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	7.614	-	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SS16HM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 1A DO214AC	5.598	Automotive, AEC-Q101	Schottky	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SR109 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	2.106	-	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SR109 B0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 1A DO204AL	4.716	-	Schottky	90V	1A	850mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
F1T1GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	2.970	Automotive, AEC-Q101	Standard	50V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S1BLHM2G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	2.340	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1ALHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	4.284	Automotive, AEC-Q101	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 50V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1BLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SUB SMA	7.776	Automotive, AEC-Q101	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
S1DLHRTG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SUB SMA	7.290	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C

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