Taiwan Semiconductor Corporation Gleichrichter - Single

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Spannung - Vorwärts (Vf) (Max) @ If

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 28/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
1N4933G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	4.770	-	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	2.484	Automotive, AEC-Q101	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8.802	-	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	8.568	Automotive, AEC-Q101	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	8.892	-	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	3.726	Automotive, AEC-Q101	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8.262	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	7.002	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4.392	-	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA159GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4.788	Automotive, AEC-Q101	Standard	-	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR105G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	4.320	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR106G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	6.750	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR107G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A DO204AL	4.734	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1T1G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A TS-1	3.366	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T2G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A TS-1	5.562	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T3G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A TS-1	8.820	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T4G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2.574	-	Standard	400V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T5G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1	7.200	-	Standard	600V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T6G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	5.022	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1T7G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A TS-1	5.454	-	Standard	-	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
1N4001G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	7.884	-	Standard	50V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4002G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	4.860	-	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4936GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	2.196	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA157GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	3.580	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA158GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	6.732	Automotive, AEC-Q101	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA157G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	6.822	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
FR102G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	2.682	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA157G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	6.372	-	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA158G B0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5.454	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAV19W RHG	Taiwan Semiconductor Corporation	DIODE GEN PURP 250V 200MA SOD123	2.556	-	Standard	250V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 250V	5pF @ 0V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-65°C ~ 150°C

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