Taiwan Semiconductor Corporation Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 149/180
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Hersteller |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO201AD |
8.550 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A DO201AD |
7.578 |
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Automotive, AEC-Q101 | Schottky | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO201AD |
7.524 |
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- | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 20V 8A DO201AD |
7.668 |
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Automotive, AEC-Q101 | Schottky | 20V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO201AD |
8.586 |
|
- | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 8A DO201AD |
7.272 |
|
Automotive, AEC-Q101 | Schottky | 30V | 8A | 550mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 8A DO201AD |
8.154 |
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Automotive, AEC-Q101 | Schottky | 50V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 8A DO201AD |
4.464 |
|
Automotive, AEC-Q101 | Schottky | 60V | 8A | 700mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A DO201AD |
4.392 |
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- | Schottky | 90V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 8A DO201AD |
8.892 |
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Automotive, AEC-Q101 | Schottky | 90V | 8A | 920mV @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 8A DO201AD |
6.516 |
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Automotive, AEC-Q101 | Schottky | 150V | 8A | 1.02V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 100V 1A TS-1 |
4.356 |
|
Automotive, AEC-Q101 | Schottky | 100V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A TS-1 |
4.824 |
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Automotive, AEC-Q101 | Schottky | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 1A TS-1 |
6.354 |
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Automotive, AEC-Q101 | Schottky | 40V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 1A TS-1 |
4.068 |
|
Automotive, AEC-Q101 | Schottky | 60V | 1A | 700mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 1A TS-1 |
2.430 |
|
- | Schottky | 90V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 90V 1A TS-1 |
6.732 |
|
Automotive, AEC-Q101 | Schottky | 90V | 1A | 800mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | - | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 600MA TS-1 |
5.256 |
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- | Standard | 50V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 50V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 600MA TS-1 |
3.600 |
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Automotive, AEC-Q101 | Standard | 50V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 50V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 600MA TS-1 |
3.582 |
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- | Standard | 100V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 600MA TS-1 |
5.742 |
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Automotive, AEC-Q101 | Standard | 100V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 100V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 600MA TS-1 |
3.510 |
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- | Standard | 200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 600MA TS-1 |
2.718 |
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Automotive, AEC-Q101 | Standard | 200V | 600mA | 950mV @ 600mA | Fast Recovery =< 500ns, > 200mA (Io) | 15ns | 5µA @ 200V | 9pF @ 4V, 1MHz | Through Hole | T-18, Axial | TS-1 | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 2A DO204AC |
3.400 |
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Automotive, AEC-Q101 | Standard | 200V | 2A | 950mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 200V | 35pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
7.938 |
|
- | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 5A DO201AD |
7.092 |
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Automotive, AEC-Q101 | Standard | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
3.582 |
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- | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 5A DO201AD |
7.380 |
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Automotive, AEC-Q101 | Standard | 400V | 5A | 1.55V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 10µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 175°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 5A DO201AD |
2.808 |
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Automotive, AEC-Q101 | Standard | 600V | 5A | 2.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 30µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 8A TO220AC |
7.578 |
|
- | Standard | 50V | 8A | 1.1V @ 8A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 50pF @ 4V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -55°C ~ 150°C |