Taiwan Semiconductor Corporation Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Current - Average Rectified (Io)

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Spannung - Vorwärts (Vf) (Max) @ If

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Geschwindigkeit

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 140/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
SS29LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A SUB SMA	7.020	Automotive, AEC-Q101	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	4.860	Automotive, AEC-Q101	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS310LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 3A SUB SMA	8.226	Automotive, AEC-Q101	Schottky	100V	3A	850mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS34LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 3A SUB SMA	5.688	Automotive, AEC-Q101	Schottky	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 125°C
SS36LHRUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	3.708	Automotive, AEC-Q101	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS36LHRVG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 60V 3A SUB SMA	5.598	Automotive, AEC-Q101	Schottky	60V	3A	750mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 60V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
TSOD1F10HM RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 1A SOD123FL	2.160	-	Standard	-	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
TSOD1F1HM RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A SOD123FL	8.586	-	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
TSOD1F2HM RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A SOD123FL	2.412	-	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
TSOD1F4HM RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A SOD123FL	7.650	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
TSOD1F6HM RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A SOD123FL	3.006	-	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
TSOD1F8HM RVG	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A SOD123FL	2.322	-	Standard	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	4pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123FL	-55°C ~ 150°C
1N4002GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	6.390	Automotive, AEC-Q101	Standard	100V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	7.614	-	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4003GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	2.520	Automotive, AEC-Q101	Standard	200V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	2.808	-	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4006GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO204AL	8.478	Automotive, AEC-Q101	Standard	800V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	3.150	-	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4933GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO204AL	6.012	Automotive, AEC-Q101	Standard	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 50V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	7.632	-	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4934GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO204AL	5.976	Automotive, AEC-Q101	Standard	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6.246	-	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4935GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO204AL	6.372	Automotive, AEC-Q101	Standard	200V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 200V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N4937GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	5.454	Automotive, AEC-Q101	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5817HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 20V 1A DO204AL	4.302	Automotive, AEC-Q101	Schottky	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5818 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	8.172	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
1N5818HA0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 1A DO204AL	6.156	Automotive, AEC-Q101	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	55pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 125°C
BA157GHA0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	4.572	Automotive, AEC-Q101	Standard	400V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BA158G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO204AL	2.790	-	Standard	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
BAT42 A0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 200MA DO35	8.730	-	Schottky	30V	200mA	650mV @ 50mA	Small Signal =< 200mA (Io), Any Speed	5ns	100nA @ 25V	7pF @ 1V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 125°C

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