Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 984/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Renesas Electronics America |
TRANSISTOR |
3.942 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3.294 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
6.426 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3.186 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3.942 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
3.438 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
2.070 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
5.544 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
8.928 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
4.230 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
6.066 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Renesas Electronics America |
TRANSISTOR |
2.934 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 60V DFN6 |
3.042 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.592nC @ 4.5V | 40V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 60V DFN6 |
6.444 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 5V, 10V | 2Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.592nC @ 4.5V | 40V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
7.758 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.764nC @ 4.5V | 12V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
8.874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 1.8V, 5V | 2Ohm @ 50mA, 5V | 1V @ 250µA | 0.764nC @ 4.5V | 12V | 50pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 20V DFN6 |
5.436 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 1A (Ta) | 1.5V, 4.5V | 100mOhm @ 500mA, 4.5V | 1.2V @ 1mA | 2.4nC @ 4.5V | 8V | 220pF @ 10V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
2.484 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
3.276 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 900mW (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621 | 6-PowerVFDFN |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
3.528 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 50V DFN6 |
4.644 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 280mA (Ta) | 5V, 10V | 2.5Ohm @ 500mA, 10V | 2.5V @ 250µA | 0.72nC @ 4.5V | 20V | 70pF @ 25V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
|
|
|
Central Semiconductor Corp |
MOSFET P-CH 20V DFN6 |
6.804 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 950mA (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 8V | 200pF @ 16V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
|
|
|
Central Semiconductor Corp |
MOSFET P-CH 20V DFN6 |
4.266 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 950mA (Ta) | 1.8V, 4.5V | 150mOhm @ 950mA, 4.5V | 1V @ 250µA | 3.56nC @ 4.5V | 8V | 200pF @ 16V | - | 1.6W (Ta) | -65°C ~ 150°C (TJ) | Surface Mount | TLM621H | 6-XFDFN Exposed Pad |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V TO92 |
8.316 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET P-CHANNEL 8SOP |
3.060 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V, 10V | 12mOhm @ 11A, 10V | 3V @ 250µA | 64nC @ 10V | ±20V | 3680pF @ 8V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 500MA TO92 |
3.024 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 500mA (Tc) | 10V | 10Ohm @ 250mA, 10V | 4.5V @ 250µA | 6.1nC @ 10V | ±30V | 138pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-92 | TO-226-3, TO-92-3 (TO-226AA) |
|
|
|
Taiwan Semiconductor Corporation |
MOSFET N-CH 700V ITO220 |
2.880 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 900mOhm @ 4A, 10V | 4V @ 250µA | 32nC @ 10V | ±30V | 2006pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | ITO-220AB | TO-220-3 Full Pack, Isolated Tab |
|
|
|
Central Semiconductor Corp |
MOSFET N-CH 100V 3A SOT-223 |
8.208 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 3A (Ta) | 10V | 150mOhm @ 2A, 10V | 4V @ 250µA | 15nC @ 10V | 20V | 975pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
|
|
|
Vishay Siliconix |
MOSFET N-CH 20V SC-70-6 |
2.556 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta), 12A (Tc) | 4.5V, 10V | 13.5mOhm @ 7A, 10V | 3V @ 250µA | 18nC @ 10V | ±20V | 800pF @ 10V | - | 3.5W (Ta), 19.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 30V SMD |
6.552 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta), 12A (Tc) | 4.5V, 10V | 17mOhm @ 7.4A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 560pF @ 15V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |