Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 932/999
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
Menge |
Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Alpha & Omega Semiconductor |
MOSFET NCH 60V 46A TO251A |
6.480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Ta), 46A (Tc) | 10V | 6.8mOhm @ 20A, 10V | 3.5V @ 250µA | 75nC @ 10V | ±20V | 4050pF @ 30V | - | 2.5W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET NCH 60V 46A TO251A |
2.736 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 10A (Ta), 46A (Tc) | 4.5V, 10V | 10.7mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 2007pF @ 30V | - | 2.5W (Ta), 71.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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|
Alpha & Omega Semiconductor |
MOSFET NCH 60V 35A TO251A |
7.668 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 13A (Ta), 35A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 2.5V @ 250µA | 30nC @ 10V | ±20V | 1340pF @ 30V | - | 6.2W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
|
|
Alpha & Omega Semiconductor |
MOSFET NCH 150V 106A TO262 |
7.254 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 16A (Ta), 106A (Tc) | 10V | 10.7mOhm @ 20A, 10V | 5.1V @ 250µA | 60nC @ 10V | ±20V | 3010pF @ 75V | - | 6.2W (Ta), 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|
Alpha & Omega Semiconductor |
MOSFET NCH 100V 140A TO262 |
6.480 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 17.5A (Ta), 140A (Tc) | 10V | 3.2mOhm @ 20A, 10V | 4.1V @ 250µA | 126nC @ 10V | ±20V | 7180pF @ 50V | - | 1.9W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 15A |
5.904 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 93A (Tc) | 10V | 6.5mOhm @ 56A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2160pF @ 50V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 100V 18A |
3.472 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta), 105A (Tc) | 10V | 6mOhm @ 50A, 10V | 3.9V @ 150µA | 50nC @ 10V | ±20V | 2116pF @ 50V | - | 3.8W (Ta), 132W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 100V 15A |
3.546 |
|
FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 15A (Ta), 80A (Tc) | 10V | 8mOhm @ 48A, 10V | 3.6V @ 100µA | 39nC @ 10V | ±20V | 1685pF @ 50V | - | 3.6W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-PowerTDFN |
|
|
ON Semiconductor |
MOSFET N-CH 30V 150MA SMCP |
6.840 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 150mA (Ta) | 1.5V, 4V | 3.7Ohm @ 80mA, 4V | - | 1.58nC @ 10V | ±10V | 7pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | SMCP | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 50V 100MA 3CP |
5.202 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | 7.8Ohm @ 50mA, 4V | - | 1.57nC @ 10V | ±10V | 6.6pF @ 10V | - | 250mW (Ta) | 150°C (TJ) | Surface Mount | 3-CP | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 50V 100MA SPA |
3.420 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 1.5V, 4V | 7.8Ohm @ 50mA, 4V | 1.3V @ 100µA | 1.57nC @ 10V | ±10V | 6.6pF @ 10V | - | 250mW (Ta) | 150°C (TJ) | Through Hole | 3-SPA | SC-72 |
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ON Semiconductor |
MOSFET P-CH 60V 1.8A CPH3 |
6.552 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4V, 10V | 250mOhm @ 1A, 10V | - | 6nC @ 10V | ±20V | 262pF @ 20V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 30V 2.5A CPH3 |
4.644 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 2.5A (Ta) | 4V, 10V | 156mOhm @ 1A, 10V | 2.6V @ 1mA | 3.9nC @ 10V | ±20V | 172pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET N-CH 20V 3.5A CPH3 |
4.986 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 3.5A (Ta) | 1.8V, 4.5V | 71mOhm @ 1.5A, 4.5V | - | 2.8nC @ 4.5V | ±12V | 260pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 3-CPH | TO-236-3, SC-59, SOT-23-3 |
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ON Semiconductor |
MOSFET P-CH 60V 4A CPH6 |
4.050 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 4A (Ta) | 4V, 10V | 100mOhm @ 2A, 10V | - | 14nC @ 10V | ±20V | 600pF @ 20V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-CPH | SOT-23-6 Thin, TSOT-23-6 |
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ON Semiconductor |
MOSFET N-CH 24V 6A EFCP |
6.984 |
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- | N-Channel | MOSFET (Metal Oxide) | 24V | 6A (Ta) | - | 45mOhm @ 3A, 4.5V | 1.3V @ 1mA | 7nC @ 4.5V | ±12V | - | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | EFCP1313-4CC-037 | 4-XFBGA |
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ON Semiconductor |
MOSFET P-CH 12V 3.5A MCH3 |
3.492 |
|
- | P-Channel | MOSFET (Metal Oxide) | 12V | 3.5A (Ta) | 0.9V, 2.5V | 69mOhm @ 1.5A, 2.5V | 800mV @ 1mA | 6.2nC @ 2.5V | ±5V | 1010pF @ 6V | - | 1W (Ta) | -55°C ~ 150°C (TA) | Surface Mount | SC-70FL/MCPH3 | 3-SMD, Flat Leads |
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ON Semiconductor |
MOSFET N-CH 100V 9A TP-FA |
5.940 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta) | 4V, 10V | 225mOhm @ 3A, 10V | 2.6V @ 1mA | 9.8nC @ 10V | ±20V | 490pF @ 20V | - | 1W (Ta), 19W (Tc) | 150°C (TJ) | Surface Mount | DPAK/TP-FA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
Diodes Incorporated |
MOSFET N-CH 30V 12A POWERDI |
8.676 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | 4310pF @ 15V | Schottky Diode (Body) | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 30V 12A POWERDI |
3.222 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 10mOhm @ 13.5A, 10V | 2.5V @ 250µA | 14.7nC @ 10V | ±20V | 4310pF @ 15V | Schottky Diode (Body) | 890mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET P-CH 20V 3A SOT23 |
6.462 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.8V, 4.5V | 95mOhm @ 3A, 4.5V | 1.3V @ 250µA | 9nC @ 4.5V | ±8V | 857pF @ 10V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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NXP |
MOSFET N-CH 55V 5.5A SOT-223 |
3.582 |
|
TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 5.5A (Tc) | 5V | 150mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 330pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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|
Nexperia |
MOSFET N-CH 55V 7.5A SOT223 |
5.364 |
|
Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 7.5A (Tc) | 5V | 80mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 650pF @ 25V | - | 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
|
|
Vishay Siliconix |
MOSFET P-CH 8V MICROFOOT |
4.086 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | - | 1.2V, 4.5V | 68mOhm @ 1.5A, 4.5V | 700mV @ 250µA | 10nC @ 4.5V | ±5V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA |
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Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
8.100 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 950mOhm @ 3.6A, 10V | 3.9V @ 250µA | 31nC @ 10V | ±20V | 785pF @ 100V | - | 32W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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|
Infineon Technologies |
MOSFET N-CH 800V TO-220-3 |
7.254 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 800V | 6.8A (Tc) | - | 310mOhm @ 11A, 10V | 3.9V @ 1mA | 91nC @ 10V | - | 2320pF @ 100V | - | 35W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 650V TO-251-3 |
7.902 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 650V | 3.1A (Tc) | 10V | 1.5Ohm @ 1A, 10V | 3.5V @ 100µA | 10.5nC @ 10V | ±20V | 225pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-251 | TO-251-3 Stub Leads, IPak |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
4.716 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 2.3A (Tc) | 10V | 2.1Ohm @ 760mA, 10V | 3.5V @ 60µA | 6.7nC @ 10V | ±20V | 140pF @ 100V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
Infineon Technologies |
MOSFET N-CH 500V 4.6A TO-220FP |
7.470 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 500V | 4.6A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 27.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
|
|
Infineon Technologies |
MOSFET N-CH 600V TO-220-3 |
3.436 |
|
CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 5.6A (Tc) | 10V | 800mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2nC @ 10V | ±20V | 373pF @ 100V | - | 27W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |