Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 918/999
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Hersteller |
Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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ON Semiconductor |
MOSFET N-CH 30V 21A DPAK |
7.290 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 118nC @ 10V | ±20V | 5160pF @ 15V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 46A TO-220 |
3.582 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 46A (Tc) | 10V | 8.4mOhm @ 23A, 10V | 4V @ 500µA | 37nC @ 10V | ±20V | 2500pF @ 40V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 100V 50A TO220AB |
7.308 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 50A (Tc) | 6V, 10V | 21mOhm @ 10A, 10V | 4V @ 250µA | 68nC @ 10V | ±20V | 2055pF @ 50V | - | 3.1W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Diodes Incorporated |
MOSFET P-CH 30V POWERDI3333-8 |
2.844 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | 11.5A (Ta) | 4.5V, 10V | 10mOhm @ 11.5A, 10V | 3V @ 250µA | 41nC @ 10V | ±25V | 2246pF @ 15V | - | 940mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerVDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 6.5A 8-SOP |
4.554 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | - | 36mOhm @ 3.5A, 1.8V | 700mV @ 250µA | 8.5nC @ 4.5V | - | 151pF @ 10V | - | - | - | Surface Mount | - | - |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 6A VS-8 |
5.004 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 3A, 10V | 2V @ 100µA | 22nC @ 10V | +20V, -25V | 970pF @ 10V | - | 700mW (Ta) | 150°C (TJ) | Surface Mount | VS-8 (2.9x1.5) | 8-SMD, Flat Lead |
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ON Semiconductor |
MOSFET N-CH 150V 75A TO-247 |
6.552 |
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Automotive, AEC-Q101, UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 75A (Tc) | 10V | 16mOhm @ 75A, 10V | 4V @ 250µA | 480nC @ 20V | ±20V | 7690pF @ 25V | - | 500W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 60V 7A 8SOIC |
6.570 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 7A (Ta) | - | 28mOhm @ 7A, 10V | 4V @ 250µA | 32nC @ 10V | - | 1107pF @ 30V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 40V 25A TO-263AB |
7.074 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 25A (Ta) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 9310pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 34A D2PAK |
5.058 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 34A (Ta) | 4.5V, 10V | 1.9mOhm @ 80A, 10V | 3V @ 250µA | 265nC @ 10V | ±20V | 11400pF @ 15V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 19A TO-263AB |
3.960 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta), 93A (Tc) | 4.5V, 10V | 5.7mOhm @ 35A, 10V | 2.5V @ 250µA | 67nC @ 10V | ±20V | 2525pF @ 15V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 100V 56A D2PAK |
6.714 |
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Automotive, AEC-Q101, UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 56A (Tc) | 10V | 25mOhm @ 56A, 10V | 4V @ 250µA | 130nC @ 20V | ±20V | 2000pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET P-CH 12V 1.52A 6TSOP |
3.240 |
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- | P-Channel | MOSFET (Metal Oxide) | 12V | 1.52A (Ta) | 1.8V, 4.5V | 120mOhm @ 1A, 4.5V | 600mV @ 1mA | 8.8nC @ 4.5V | ±8V | 500pF @ 9.6V | - | 417mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
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Nexperia |
MOSFET N-CH 55V 5A SOT223 |
2.520 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Ta) | 5V | 40mOhm @ 5A, 5V | 2V @ 1mA | - | ±10V | 1400pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SC-73 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 31A DIRECTFET |
2.106 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 25V 40A PQFN |
6.372 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 3.4mOhm @ 30A, 10V | 2.1V @ 35µA | 20nC @ 10V | ±20V | 1270pF @ 13V | - | 2.7W (Ta), 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 100V 6.5A DPAK |
6.372 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 6.5A (Tc) | 4.5V, 10V | 200mOhm @ 3A, 10V | 3V @ 250µA | 4nC @ 5V | ±20V | 240pF @ 25V | - | 1.25W (Ta), 16.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 100V 19A 8QFN |
7.524 |
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FASTIRFET™, HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 19A (Ta) | 10V | 5.2mOhm @ 50A, 10V | 3.6V @ 150µA | 54nC @ 10V | ±20V | 2320pF @ 50V | - | 3.6W (Ta), 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 30V 35A PPAK SO-8 |
6.966 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 5.6mOhm @ 10A, 10V | 2.5V @ 250µA | 35nC @ 10V | ±20V | 1300pF @ 15V | - | 5W (Ta), 27.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
4.986 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 6.7mOhm @ 10A, 10V | 2.4V @ 250µA | 25nC @ 10V | +20V, -16V | 1100pF @ 15V | - | 3.3W (Ta), 31.25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 30V 80A D2PAK |
5.580 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 243nC @ 10V | ±20V | 11825pF @ 15V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 80A D2PAK |
2.700 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 80A (Tc) | 10V | 2.5mOhm @ 80A, 10V | 4V @ 250µA | 280nC @ 10V | ±20V | 15000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 70A D2PAK |
7.002 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 9mOhm @ 70A, 10V | 4V @ 250µA | 62nC @ 10V | ±20V | 3805pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 21A TO-263AB |
7.038 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 160A (Tc) | 4.5V, 10V | 3.9mOhm @ 35A, 10V | 2.5V @ 250µA | 132nC @ 10V | ±20V | 5200pF @ 15V | - | 160W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET P-CH 30V 14.5A 8-SOIC |
2.196 |
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Automotive, AEC-Q101, PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 30V | 14.5A (Ta) | 4.5V, 10V | 7.8mOhm @ 14.5A, 10V | 3V @ 250µA | 124nC @ 10V | ±25V | 4700pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 600V 7.4A D2PAK |
2.484 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 7.4A (Tc) | 10V | 1Ohm @ 3.7A, 10V | 5V @ 250µA | 38nC @ 10V | ±30V | 1430pF @ 25V | - | 3.13W (Ta), 142W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 55V 20A DPAK |
3.528 |
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Automotive, AEC-Q101, UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 10V | 36mOhm @ 20A, 10V | 4V @ 250µA | 44nC @ 20V | ±20V | 680pF @ 25V | - | 93W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 30V 42A TO252 |
7.560 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Tc) | 4.5V, 10V | 3.9mOhm @ 22A, 10V | 2.5V @ 250µA | 100nC @ 10V | ±20V | 3535pF @ 15V | - | 2.5W (Ta), 73.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 4A TO-252 |
2.628 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 950mOhm @ 1.3A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 910pF @ 100V | - | 125W (Tc) | -50°C ~ 150°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 70A TO-251 |
4.410 |
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AlphaMOS | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 70A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.2V @ 250µA | 62nC @ 10V | ±20V | 3130pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-251A | TO-251-3 Stub Leads, IPak |