Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 852/999
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Beschreibung |
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 60V 57A D2PAK |
5.544 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 57A (Tc) | 10V | 12mOhm @ 34A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1690pF @ 25V | - | 92W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK |
6.102 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.9mOhm @ 31A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 1420pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 61A D2PAK |
3.366 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK |
6.750 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 4.5V, 10V | 3.1mOhm @ 75A, 10V | 2.7V @ 250µA | 110nC @ 5V | ±16V | 5080pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK |
8.802 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
8.118 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 4V, 10V | 65mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | ±16V | 480pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 20A DPAK |
2.322 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 45mOhm @ 14A, 10V | 1V @ 250µA | 15nC @ 4.5V | ±16V | 450pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
3.490 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
8.442 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 100V 17A DPAK |
4.194 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 105mOhm @ 10A, 10V | 2V @ 250µA | 34nC @ 5V | ±16V | 800pF @ 25V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
4.410 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 8mOhm @ 42A, 10V | 3V @ 250µA | 66nC @ 5V | ±16V | 2900pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET-LV |
2.250 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Tc) | 4.5V, 10V | 8.9mOhm @ 13A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 30V 13A DIRECTFET-LV |
5.634 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Tc) | 4.5V, 10V | 8.9mOhm @ 13A, 10V | 2.35V @ 25µA | 10nC @ 4.5V | ±20V | 1010pF @ 15V | - | 2.5W (Ta), 20W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DIRECTFET S1 | DirectFET™ Isometric S1 |
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Infineon Technologies |
MOSFET N-CH 30V 23A DIRECTFET |
6.840 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 140A (Tc) | 4.5V, 10V | 2.5mOhm @ 23A, 10V | 2.35V @ 100µA | 42nC @ 4.5V | ±20V | 4110pF @ 15V | - | 2.1W (Ta), 75W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
7.434 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 4.5V, 10V | 17.5mOhm @ 9.8A, 10V | 2.4V @ 25µA | 41nC @ 10V | ±20V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.8A 8SOIC |
6.318 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 9.8A (Ta) | 10V, 20V | 12.1mOhm @ 7.8A, 20V | 2.4V @ 25µA | 14nC @ 4.5V | ±25V | 1270pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 75V 80A TO220AB |
3.204 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 9mOhm @ 46A, 10V | 4V @ 100µA | 84nC @ 10V | ±20V | 3070pF @ 50V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 40V 24A PQFN |
8.550 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 24A (Ta), 100A (Tc) | 10V | 3.5mOhm @ 50A, 10V | 4V @ 100µA | 80nC @ 10V | ±20V | 3120pF @ 25V | - | 3.6W (Ta), 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 40V 22A PQFN |
2.484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 100A (Tc) | 10V | 4.3mOhm @ 50A, 10V | 4V @ 100µA | 65nC @ 10V | ±20V | 2460pF @ 25V | - | 3.6W (Ta), 105W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 200V 3.8A PQFN |
2.538 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Ta), 20A (Tc) | 10V | 99.9mOhm @ 5.8A, 10V | 5V @ 100µA | 30nC @ 10V | ±20V | 1380pF @ 50V | - | 3.6W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) | 8-VQFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 100V 11A TO220-5 |
4.392 |
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Infineon Technologies |
MOSFET N-CH 30V 9.9A 8SOIC |
8.244 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 9.9A (Ta) | 2.5V, 4.5V | 14.6mOhm @ 9.9A, 4.5V | 1.1V @ 10µA | 11nC @ 4.5V | ±12V | 1025pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Nexperia |
MOSFET N-CH 25V 100A LFPAK |
4.968 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 100A (Tc) | - | 1.2mOhm @ 15A, 10V | 2.15V @ 1mA | 105nC @ 10V | - | 6380pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Nexperia |
MOSFET N-CH 30V 100A LFPAK |
3.978 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | - | 1.3mOhm @ 15A, 10V | 2.15V @ 1mA | 100nC @ 10V | - | 6227pF @ 12V | - | - | - | Surface Mount | LFPAK56, Power-SO8 | SOT-1023, 4-LFPAK |
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Nexperia |
MOSFET N-CH 75V 100A TO220AB |
3.526 |
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TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 100A (Tc) | 4.5V, 10V | 7.6mOhm @ 25A, 10V | 2.8V @ 1mA | 123nC @ 10V | ±16V | 7600pF @ 25V | - | 204W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Nexperia |
MOSFET N-CH 30V 120A I2PAK |
8.226 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 10V | 2.2mOhm @ 25A, 10V | 2.8V @ 1mA | 229nC @ 10V | ±16V | 14964pF @ 25V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Texas Instruments |
MOSFET P-CH 20V 3A 6DSBGA |
8.442 |
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NexFET™ | P-Channel | MOSFET (Metal Oxide) | 20V | 3A (Tc) | 1.8V, 4.5V | 58mOhm @ 1.5A, 4.5V | 1V @ 250µA | 4.3nC @ 4.5V | ±8V | 435pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-DSBGA (1x1.5) | 6-UFBGA, DSBGA |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-262 |
3.744 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A D2PAK |
7.290 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4.5V @ 250µA | 22nC @ 10V | ±30V | 600pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A D2PAK |
5.166 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |