Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 823/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 24V 195A D2PAK |
3.402 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 195A (Tc) | 10V | 1.65mOhm @ 195A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 7590pF @ 24V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 38A DIRECTFET |
8.226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 38A (Ta), 200A (Tc) | 4.5V, 10V | 1.25mOhm @ 38A, 10V | 2.35V @ 150µA | 69nC @ 4.5V | ±20V | 6750pF @ 13V | - | 2.8W (Ta), 96W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 31A DIRECTFET |
8.190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 31A (Ta), 190A (Tc) | 4.5V, 10V | 1.8mOhm @ 31A, 10V | 2.35V @ 150µA | 63nC @ 4.5V | ±20V | 6030pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 16A 8PQFN |
8.316 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 16A (Ta), 42A (Tc) | 4.5V, 10V | 7.1mOhm @ 16A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | 1510pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A PQFN33 |
2.286 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 29A (Tc) | 4.5V, 10V | 12.4mOhm @ 12A, 10V | 2.35V @ 25µA | 8.1nC @ 4.5V | ±20V | 755pF @ 15V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (3x3) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 100V 9.3A PQFN56 |
6.570 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.3A (Ta), 46A (Tc) | 10V | 18mOhm @ 9.3A, 10V | 4.9V @ 100µA | 36nC @ 10V | ±20V | 1510pF @ 50V | - | 3.1W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56 |
6.894 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 35A (Tc) | 4.5V, 10V | 8.7mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1160pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 15A PQFN56 |
6.354 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 15A (Ta), 34A (Tc) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 2.35V @ 25µA | 14nC @ 4.5V | ±20V | 1210pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 24A PQFN56 |
6.696 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 24A (Ta), 104A (Tc) | 4.5V, 10V | 3.3mOhm @ 25A, 10V | 2.35V @ 100µA | 51nC @ 4.5V | ±20V | 4270pF @ 15V | - | 3.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PQFN (5x6) Single Die | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 30V 20A PQFN56 |
7.632 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 54A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.35V @ 50µA | 26nC @ 4.5V | ±20V | 2360pF @ 15V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
5.958 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET P-CH 20V 3.8A 6-WLCSP |
4.806 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 3.8A (Ta) | 1.5V, 4.5V | 64mOhm @ 2A, 4.5V | 1V @ 250µA | 25nC @ 4.5V | ±8V | 1570pF @ 10V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WLCSP (1.0x1.5) | 6-UFBGA, WLCSP |
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IXYS |
MOSFET N-CH 200V 30A TO-247AD |
8.046 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 85mOhm @ 18A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2970pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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IXYS |
MOSFET N-CH 500V 24A TO-247AD |
2.628 |
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MegaMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 4200pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD | TO-3P-3 Full Pack |
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IXYS |
MOSFET N-CH 500V 12A ISOPLUS220 |
4.446 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 400mOhm @ 6.5A, 10V | 4V @ 2.5mA | 120nC @ 10V | ±20V | 2800pF @ 25V | - | 140W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 800V 13A ISOPLUS220 |
7.398 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 650mOhm @ 500mA, 10V | 4.5V @ 4mA | 90nC @ 10V | ±20V | 4300pF @ 25V | - | 230W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 500V 21A ISOPLUS220 |
7.254 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 21A (Tc) | 10V | 230mOhm @ 12A, 10V | 4V @ 4mA | 135nC @ 10V | ±20V | 4200pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 500V 23A ISOPLUS220 |
2.700 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 23A (Tc) | 10V | 200mOhm @ 13A, 10V | 4V @ 4mA | 135nC @ 10V | ±20V | 4200pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 300V ISOPLUS220 |
5.544 |
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- | N-Channel | MOSFET (Metal Oxide) | 300V | - | - | - | - | - | - | - | - | - | - | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 200V 60A ISOPLUS220 |
7.578 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 60A (Tc) | 10V | 33mOhm @ 30A, 10V | 4V @ 4mA | 155nC @ 10V | ±20V | 5200pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 80V 80A ISOPLUS220 |
5.454 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4800pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 85V 80A ISOPLUS220 |
3.042 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 85V | 80A (Tc) | 10V | 11mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4800pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 100V 80A ISOPLUS220 |
6.282 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 12.5mOhm @ 40A, 10V | 4V @ 4mA | 180nC @ 10V | ±20V | 4800pF @ 25V | - | 230W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS220™ | ISOPLUS220™ |
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IXYS |
MOSFET N-CH 100V 176A ISOPLUS227 |
5.202 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 176A (Tc) | 10V | 8mOhm @ 90A, 10V | 4V @ 8mA | 360nC @ 10V | ±20V | 9100pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 200V 158A ISOPLUS227 |
8.028 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 158A (Tc) | 10V | 12mOhm @ 500mA, 10V | 4V @ 8mA | 380nC @ 10V | ±20V | 14400pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 22A ISOPLUS227 |
3.006 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 22A (Tc) | 10V | 390mOhm @ 12A, 10V | 5V @ 8mA | 250nC @ 10V | ±20V | 7000pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 1000V 33A ISOPLUS227 |
5.490 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 33A (Tc) | 10V | 240mOhm @ 18A, 10V | 5.5V @ 8mA | 455nC @ 10V | ±20V | 15000pF @ 25V | - | 580W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 900V 34A ISOPLUS227 |
8.676 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 900V | 34A (Tc) | 10V | 220mOhm @ 19.5A, 10V | 5V @ 8mA | 375nC @ 10V | ±20V | 13400pF @ 25V | - | 580W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 600V 41A SOT-227B |
7.974 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 41A (Tc) | 10V | 130mOhm @ 22A, 10V | 4.5V @ 8mA | 330nC @ 10V | ±20V | 8900pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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IXYS |
MOSFET N-CH 500V 47A SOT-227B |
4.680 |
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HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 47A (Tc) | 10V | 90mOhm @ 27.5A, 10V | 4.5V @ 8mA | 330nC @ 10V | ±20V | 9400pF @ 25V | - | 500W (Tc) | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |